Browsing by Author "Lin, Yi-Wei"

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A 40nm 1.0Mb Pipeline 6T SRAM with Variation-Tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist
(2013)
Chang, Chi-Shin
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Yang, Hao-I
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Liao, Wei-Nan
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Lin, Yi-Wei
;
Lien, Nan-Chun
We present a 1.0Mb pipeline 6T SRAM in 40nm Low-Power CMOS technology. The design employs a variation-tolerant Step-Up Word-Line (SUWL) to improve the Read Static Noise Margin (RSNM) without compromising the Read performance and Write-ability. The Write-ability is further enhanced by an Adaptive Data-Aware Write-Assist (ADAWA) scheme. The 1.0Mb test chip operates from 1.5V to 0.7V, with operating frequency of 800MHz@1.2V and 25 degrees C. The measured power consumption is 23.21mW (Active)/2.42mW (Leakage) at 1.2V, TT, 25 degrees C; and 6.01mW (Active)/0.35mW (Leakage) at 0.7V, TT, 25 degrees C.
A High-Performance Low V(MIN) 55nm 512Kb Disturb-Free 8T SRAM with Adaptive VVSS Control
(2011)
Yang, Hao-I
;
Yang, Shih-Chi
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Hsia, Mao-Chih
;
Lin, Yung-Wei
;
Lin, Yi-Wei
This paper describes a high-performance low V(MIN) SRAM with a disturb-free 8T cell. The SRAM utilizes single-ended buffer Read, and cross-point data-aware Write Word-Line structure with adaptive VVSS control to eliminate Read disturb and Half-Select disturb, thus facilitating bit-interleaving architecture and achieving low V(MIN). A 512Kb test chip is implemented in UMC 55nm Standard Performance (SP) CMOS technology. The measurement results demonstrate operating frequency of 943MHz at 1.2V VDD and 209MHz at 0.6V VDD.
An All-Digital Bit Transistor Characterization Scheme for CMOS 6T SRAM Array
(2012)
Lin, Geng-Cing
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Wang, Shao-Cheng
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Lin, Yi-Wei
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Tsai, Ming-Chien
;
Chuang, Ching-Te
We present an all-digital bit transistor characterization scheme for CMOS 6T SRAM array. The scheme employs an on-chip operational amplifier feedback loop to measure the individual threshold voltage (VTH) of 6T SRAM bit cell transistors (holding PMOS, pull-down NMOS, and access NMOS) in SRAM cell array environment. The measured voltage is converted to frequency with dual VCO and counter based digital read-out to facilitate data extraction, processing, and statistical analysis. A 512Kb test chip is implemented in 55nm 1P10M Standard Performance (SP) CMOS technology. Monte Carlo simulations indicate that the accuracy of the VTH measurement scheme is about 2-7mV at TT corner across temperature range from 85 degrees C to -45 degrees C, and post-layout simulations show the resolution of the digital read-out scheme is < 0.2mV per bit. Measured VTH distributions agree well with Monte Carlo simulation results.
Design and Implementation of Dynamic Word-Line Pulse Write Margin Monitor for SRAM
(2012)
Wang, Shao-Cheng
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Lin, Geng-Cing
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Lin, Yi-Wei
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Tsai, Ming-Chien
;
Chiu, Yi-Wei
We present an all-digital monitor structure to measure the Write Margin (WM) with dynamic Word-Line (WL) pulse for standard CMOS 6T SRAM. Ring oscillator and frequency divider based structures are used to generate wide range WL pulses (150ps similar to 32ns) with resolution of 50ps. The bit-line voltage is then successively stepped down for dynamic Write Margin characterization under given word-line pulse width. An improved Skitter based structure is employed to measure the WL pulse width with resolution of 10 similar to 20ps. Implementation of a 256Kb test chip in UMC 55nm Standard Performance (SP) CMOS technology is described.
High-Performance 0.6V V-MIN 55nm 1.0Mb 6T SRAM with Adaptive BL Bleeder
(2012)
Yang, Hao-I
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Lin, Yi-Wei
;
Hsia, Mao-Chih
;
Lin, Geng-Cing
;
Chang, Chi-Shin
This paper presents a 1.0Mb high-performance 0.6V V-MIN 6T SRAM design implemented in UMC 55nm Standard Performance (SP) CMOS technology. This design utilizes an adaptive LBL bleeder technique to reduce Read disturb and Half-Select disturb of 6T cells while maintaining adequate sensing margin. A bleeder timing control circuit adaptively adjusts the LBL voltage level prior to Read/Write operation to facilitate wide operation voltage range. Hierarchical WL, hierarchical BL, and distributed replica timing control scheme are used to improve SRAM performance. Based on measurement results, the SRAM operates from 1.5V down to 0.6V. The maximum operating frequency is 1.517GHz@1.5V and 469MHz@0.7V.
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
(2011-08-01)
Wu, Ming-Chi
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Lin, Yi-Wei
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The Ti/ZrO(2)/Pt resistive memory devices with one transistor and one resistor (1T1R) architecture are successfully fabricated in this letter. The tested devices show low operation current (20 mu A), low switching voltage (set/reset, 0.8/-1 V), and reliable data retention for low-resistance state (LRS) with a 20-mu A set current at 80 degrees C (over ten years) via an excellent current limiter, namely, a metal-oxide-semiconductor field-effect transistor (MOSFET). In addition, multilevel storage characteristics are also demonstrated by modulating the amplitude of the MOSFET gate voltage. The various LRS levels obtained are possibly attributed to the formation of different numbers and sizes of conducting filaments consisting of oxygen vacancies caused by an external electric field. Moreover, reproducible resistive switching characteristics up to 2000 switching cycles are achieved in the same device. Our 1T1R ZrO(2)-based resistive switching access memory with low-power and highly reliable multilevel operation has high potential for practical applications.
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
(2011-08-01)
Wu, Ming-Chi
;
Lin, Yi-Wei
;
Jang, Wen-Yueh
;
Lin, Chen-Hsi
;
Tseng, Tseung-Yuen
The Ti/ZrO2/Pt resistive memory devices with one transistor and one resistor (1T1R) architecture are successfully fabricated in this letter. The tested devices show low operation current (20 mu A), low switching voltage (set/reset, 0.8/-1 V), and reliable data retention for low-resistance state (LRS) with a 20-mu A set current at 80 degrees C (over ten years) via an excellent current limiter, namely, a metal-oxide-semiconductor field-effect transistor (MOSFET). In addition, multilevel storage characteristics are also demonstrated by modulating the amplitude of the MOSFET gate voltage. The various LRS levels obtained are possibly attributed to the formation of different numbers and sizes of conducting filaments consisting of oxygen vacancies caused by an external electric field. Moreover, reproducible resistive switching characteristics up to 2000 switching cycles are achieved in the same device. Our 1T1R ZrO2-based resistive switching access memory with low-power and highly reliable multilevel operation has high potential for practical applications.
Module organization and variance in protein-protein interaction networks
(2015-03-23)
Lin, Chun-Yu
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Lee, Tsai-Ling
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Chiu, Yi-Yuan
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Lin, Yi-Wei
;
Lo, Yu-Shu
A module is a group of closely related proteins that act in concert to perform specific biological functions through protein-protein interactions (PPIs) that occur in time and space. However, the underlying module organization and variance remain unclear. In this study, we collected module templates to infer respective module families, including 58,041 homologous modules in 1,678 species, and PPI families using searches of complete genomic database. We then derived PPI evolution scores and interface evolution scores to describe the module elements, including core and ring components. Functions of core components were highly correlated with those of essential genes. In comparison with ring components, core proteins/PPIs were conserved across multiple species. Subsequently, protein/module variance of PPI networks confirmed that core components form dynamic network hubs and play key roles in various biological functions. Based on the analyses of gene essentiality, module variance, and gene co-expression, we summarize the observations of module organization and variance as follows: 1) a module consists of core and ring components; 2) core components perform major biological functions and collaborate with ring components to execute certain functions in some cases; 3) core components are more conserved and essential during organizational changes in different biological states or conditions.
MoNetFamily: a web server to infer homologous modules and module-module interaction networks in vertebrates
(2012-07-01)
Lin, Chun-Yu
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Lin, Yi-Wei
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Yu, Shang-Wen
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Lo, Yu-Shu
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Yang, Jinn-Moon
"A module is a fundamental unit forming with highly connected proteins and performs a certain kind of biological functions. Modules and module-module interaction (MMI) network are essential for understanding cellular processes and functions. The MoNetFamily web server can identify the modules, homologous modules (called module family) and MMI networks across multiple species for the query protein(s). This server first finds module candidates of the query by using BLASTP to search the module template database (1785 experimental and 1252 structural templates). MoNetFamily then infers the homologous modules of the selected module candidate using protein-protein interaction (PPI) families. According to homologous modules and PPIs, we statistically calculated MMIs and MMI networks across multiple species. For each module candidate, MoNetFamily identifies its neighboring modules and their MMIs in module networks of Homo sapiens, Mus musculus and Danio rerio. Finally, MoNetFamily shows the conserved proteins, PPI profiles and functional annotations of the module family. Our results indicate that the server can be useful for MMI network (e.g. 1818 modules and 9678 MMIs in H. sapiens) visualizations and query annotations using module families and neighboring modules. We believe that the server is able to provide valuable insights to determine homologous modules and MMI networks across multiple species for studying module evolution and cellular processes. The MoNetFamily sever is available at http://monetfamily.life.nctu.edu.tw."
Proteogenomics of Non-smoking Lung Cancer in East Asia Delineates Molecular Signatures of Pathogenesis and Progression
(2020-07-09)
Chen, Yi-Ju
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Roumeliotis, Theodoros, I
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Chang, Ya-Hsuan
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Chen, Ching-Tai
;
Han, Chia-Li
Lung cancer in East Asia is characterized by a high percentage of never-smokers, early onset and predominant EGFR mutations. To illuminate the molecular phenotype of this demographically distinct disease, we performed a deep comprehensive proteogenomic study on a prospectively collected cohort in Taiwan, representing early stage, predominantly female, non-smoking lung adenocarcinoma. Integrated genomic, proteomic, and phosphoproteomic analysis delineated the demographically distinct molecular attributes and hallmarks of tumor progression. Mutational signature analysis revealed age- and gender-related mutagenesis mechanisms, characterized by high prevalence of APOBEC mutational signature in younger females and over-representation of environmental carcinogen-like mutational signatures in older females. A proteomics-informed classification distinguished the clinical characteristics of early stage patients with EGFR mutations. Furthermore, integrated protein network analysis revealed the cellular remodeling underpinning clinical trajectories and nominated candidate biomarkers for patient stratification and therapeutic intervention. This multi-omic molecular architecture may help develop strategies for management of early stage never-smoker lung adenocarcinoma.