Browsing by Author "Lin, Yu-Li"

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Bio-complementary supramolecular polymers with effective self-healing functionality
(2015-01-01)
Cheng, Chih-Chia
;
Chang, Feng-Chih
;
Dai, Shenghong A.
;
Lin, Yu-Li
;
Lee, Duu-Jong
Complementary nucleobase-functionalized polymers, a combination of base-pair interactions and a blend of two different polymers, can be used for efficient construction of supramolecular polymer networks; these materials exhibit tunable mechanical properties, rapid thermo-responsiveness and self-healing behavior making them highly attractive for a wide range of potential applications. Herein, a multi-uracil functionalized polyhedral oligomeric silsesquioxane (POSS-U) and adenine end-capped three-arm polycaprolactone oligomer (PCL-A) have been successfully developed and show high complementary ability in both solution and the solid state owing to reversible uracil-adenine (U-A)-induced physical cross-linking. The POSS-U/PCL-A blend system demonstrates that physically crosslinked films can be readily tailored to provide the desired mechanical properties and rapidly reprocessed after damage under mild temperature conditions. Importantly, these films can also spontaneously self-heal at room temperature as an autonomously repairing material, without the need for external intervention. Thus, this new system provides a potential route toward the design and fabrication of next-generation self-healing polymers.
Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results
(2014-03-05)
Hsu, Hsiao-Hsuan
;
Cheng, Chun-Hu
;
Chiou, Shan-Haw
;
Huang, Chiung-Hui
;
Liu, Chia-Mei
This study involved developing robust diffusion barrier for n-type antimony telluride (SbTe) thermoelectric devices. Compared to conventional Ni barrier, the mid-band metals of Ta and TaN with favored ohmic-like contact exhibited smaller diffusion tail because of structurally stable interface on SbTe, which have been supported by first-principles calculations and demonstrated by experimental results. Furthermore, the TaN barrier has strong ionic Ta-N bonding and a high total energy of -4.7 eV/atom that could effectively suppress the formation of SbTe-compounds interfacial layer. (C) 2013 Elsevier B. V. All rights reserved.
The Investigation for In-Ga-Zn-O TFTs with Post Deposition of in-situ Ar/H-2 Plasma Treatment by Atmospheric Pressure Plasma Jet
(2016)
Chang, Kow-Ming
;
Huang, Bo-Wen
;
Wu, Chien-Hung
;
Chen, Hsin-Ying
;
Zheng, You-Xian
Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was applied for the fabrication of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). In this work, a-IGZO TFTs fabricated by AP-PECVD technique were firstly treated by post deposition of in-situ Ar/H-2 plasma with atmospheric pressure plasma Jet (APPJ). Compared to without plasma treatment, samples with the post in-situ Ar/H-2 plasma treatment on IGZO active layer exhibited higher mobility of 20.12 cm(2)/V.S, V-T of 1.11 V, lower subthreshold swing of 93 mV/decade, higher I-on/I-off of 5.34x10(7). The excellent IGZO TFTs fabricated by AP-PECVD technique also show highly transparent characteristics.