Browsing by Author "Lin, Yu-Ru"

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Elucidating user behavior of mobile learning - A perspective of the extended technology acceptance model
(2007)
Huang, Jen-Hung
;
Lin, Yu-Ru
;
Chuang, Shu-Ting
;
管理科學系
;
Department of Management Science
Purpose - The purpose of this paper is to propose and verify that the technology acceptance model (TANG can be employed to explain and predict the acceptance of mobile learning (M-learning); an activity in which users access learning material with their mobile devices. The study identifies two factors that account for individual differences, i.e. perceived enjoyment (PE) and perceived mobility value (PMV), to enhance the explanatory power of the model. Design/methodology/approach - An online survey was conducted to collect data. A total of 313 undergraduate and graduate students in two Taiwan universities answered the questionnaire. Most of the constructs in the model were measured using existing scales, while some measurement items were created specifically for this research. Structural equation modeling was employed to examine the fit of the data with the model by using the LISREL software. Findings - The results of the data analysis shows that the data fit the extended TAM model well. Consumers hold positive attitudes for M-learning, viewing M-learning as an efficient tool. Specifically, the results show that individual differences have a great impact on user acceptance and that the perceived enjoyment and perceived mobility can predict user intentions of using M-learning. Originality/value - There is scant research available in the literature on user acceptance of M-learning from a customer's perspective. The present research shows that TAM can predict user acceptance of this new technology. Perceived enjoyment and perceived mobility value are antecedents of user acceptance. The model enhances our understanding of consumer motivation of using M-learning. This understanding can aid our efforts when promoting M-learning.
FOLK RELIGION AND TOURIST INTENTION AVOIDING TSUNAMI-AFFECTED DESTINATIONS
(2008-10-01)
Huang, Jen-Hung
;
Chuang, Shu-Ting
;
Lin, Yu-Ru
;
管理科學系
;
Department of Management Science
Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
(2019-01-01)
Chen, Lun-Chun
;
Chen, Hung-Bin
;
Chang, Yu-Shuo
;
Lin, Shih-Han
;
Han, Ming-Hung
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention.