Browsing by Author "Lin, Yu-Shan"

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A Smart Headband for Epileptic Seizure Detection
(2017-01-01)
Lin, Shih-Kai
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Lin, Yu-Shan
;
Lin, Chin-Yew
;
Chiueh, Herming
;
電機工程學系
Epilepsy is a common neural disorder disease; about 1.7% of the global population has epilepsy. Most patients take antiepileptic drugs to reduce their seizures. Among them, nearly one-third of the patients are drug-resistant epilepsy. The alternative treatment is the resection surgery of removing the epileptogenic zone. However, all above patients will still have some seizures, which will influence the patients' quality-of-life, and further introduce danger and inconvenience to patients and people around. This paper presents the design and develop of the smart headband for epileptic seizure detection. The headband consists of a textile headband with flexible print circuit (FPC) inside, and fabric electrodes on it. The whole system includes the following circuits: an analog front-end circuitry for electroencephalography (EEG) record, an epileptic seizure detection System-on-Chip (SoC), and a Bluetooth Low Energy (BLE) Chip. The result of designed circuits yields a compact and low-power design of smart headband for epileptic seizure detection which is suitable for wearable usage.
Analysis of abnormal transconductance in body-tied partially-depleted silicon-on-insulator n-MOSFETs
(2017-12-31)
Lin, Chien-Yu
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Chang, Ting-Chang
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Liu, Kuan-Ju
;
Chen, Li-Hui
;
Chen, Ching-En
This research investigates the mechanism of abnormal transconductance (Gm) and abnormal charge pumping current (I-CP) in body-tied partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field effect transistors. The I-CP second hump region increases with channel length, yet is not affected by channel width. The cross-sectional view of the L-gate structure along the width direction demonstrates that a part of the poly gate area near the body contact is covered by a P+ implant, inducing a parasitic channel under the P+ poly gate. This parasitic channel leads to the abnormal Gm and I-CP hump, and such mechanism is further verified by body floating devices.
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
(2018-02-01)
Yang, Chung-I
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Bo-Wei
;
Chou, Wu-Ching
This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal gate are investigated. In devices with shorter metal gate lengths, an abnormal rise in capacitance at the off-state in capacitance-voltage (C-V) characteristic curves can be observed. This can be attributed to the stronger electric field induced by the edge of the metal gate under bias sweep when the metal gate length is shorter than the IGZO layer length. Light illumination measurements indicate a negative shift in threshold voltage and an increase in subthreshold-leakage current regardless of relative metal gate length. Moreover, negative threshold voltage shift becomes more severe with a more obvious hump in C-V characteristic curves under back-light illumination of a shorter width device, a phenomenon which has been verified by simulation.
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
(2017-06-01)
Lu, Ying-Hsin
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Chang, Ting-Chang
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Liao, Jih-Chien
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Chen, Li-Hui
;
Lin, Yu-Shan
This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer.
Identification of the mokH Gene Encoding Transcription Factor for the Upregulation of Monacolin K Biosynthesis in Monascus pilosus
(2010-01-13)
Chen, Yi-Pei
;
Yuan, Gwo-Fang
;
Hsieh, Sung-Yuan
;
Lin, Yu-Shan
;
Wang, Wei-Yi
Monacolin K is a secondary metabolite synthesized by polyketide synthases (PKS) from Monascus. The monacolin K biosynthetic gene cluster, mokA-mokI, has been characterized in Monascus pilosus. The mokH gene encoding Zn(II)2Cys6 binuclear DNA binding protein is assumed to be an activator for monacolin K production. In this study, the mokH gene was cloned and driven by the glyceraldehyde-3-phosphate dehydrogenase (gpd) promoter for overexpression in M. pilosus. The transformants containing an extra copy of the mokH gene were obtained and verified by PCR and Southern hybridization. The transcripts of mokH in the transformants were expressed significantly higher than those of the wild-type strain. The transformants were stably inherited through the next generation, as determined by observation of the enhanced green fluorescent protein (EGFP). The transformant T-mokH1 also showed a 1.7-fold higher production of monacolin K than the wild-type strain in a time course analysis. Analysis of the RT-PCR products demonstrated that the monacolin K biosynthetic genes in the transformant were expressed to a greater extent than those in the wildtype strain. These results indicated that mokH upregulated the transcription of monacolin K biosynthetic genes and increased monacolin K production.
Live Demonstration: A Wireless Multi-channel Physiological Signal Acquisition System-on-Chip for Wearable Devices
(2016-01-01)
Lee, Sheng-Cheng
;
Lin, Yu-Shan
;
Chen, Yu-Jui
;
Chiueh, Herming
;
電機工程學系
this demonstration presents a power-efficient multi-channel physiological signals acquisition system-onchip (SoC). The proposed system is implemented to achieve continuous real-time processing for acquired biosignals and analysis the results on computer or mobile devices through wireless transmission by Bluetooth low energy (BLE) protocol. The ultra-low power consumption SoC with features of lightweight, wireless, portable, rechargeable battery-based can be applied on many wearable biomedical implants.
Live Demonstration: A Wireless Multi-channel Physiological Signal Acquisition System-on-Chip for Wearable Devices
(2016-01-01)
Lin, Yu-Shan
;
Lee, Sheng-Cheng
;
Chen, Yu-Jui
;
Huang, Chia-Ming
;
Chiueh, Herming
A wireless ExG sensor tag with a multi-channel physiological signals acquisition system is demonstrated. The system contains a mixed-signal system-on-chip (SoC) and Bluetooth Low Energy (BLE) chip for data analyzing and wireless transmission. The demonstration presents acquisition of different physiological signals, such as electrocardiogram (ECG), electrooculography (EOG), surface electromyogram (EMG) being real-time recorded and wirelessly displayed on tablet. The power-efficient ExG wireless tag can be easily achieve 12 hours with 200mA battery for continuous recording of ExG signals in healthcare applications.