Browsing by Author "Lin, Yu-Ting"

Now showing 1 - 20 of 20

A 38 GHz Low-Loss Reflection-Type Phase Shifter
(2017-01-01)
Huang, Lin-Yi
;
Lin, Yu-Ting
;
Kuo, Chien-Nan
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A differential millimeter-wave reflection-type phase shifter is designed at 38 GHz in 90 nm CMOS technology. The measured data shows that the phase shift is tunable up to 161 degrees by voltage control from 0 to 2 V. The insertion loss is compensated by adding a cross-coupled transistor pair, achieving a very low level of 1.45 +/- 0.35 dB over the entire phase tuning range. The circuit consumes dc power of 9.6 mW.
A 39 GHz Reflection-Type Phase Shifter for Reflectarray Antenna Application
(2019-01-01)
Lin, Yu-Ting
;
Hsiao, Chiao-Yun
;
Chi, Pei-Ling
;
Kuo, Chien-Nan
;
交大名義發表
In this paper, a differential one-port millimeter-wave reflection-type phase shifter for reflectarray antenna applications is implemented in 90 urn CMOS technology. Assisted by a switched terminator, the measured phase shift achieves more than 360 degrees using voltage control from 0 to 1 V. Signal loss is compensated in this design to alleviate the loss issue of passive phase shifters. The circuit consumes de power of 14.4 mW.
A CONTROL SYSTEM DESIGN FOR EFFICIENTLY OPERATING FREE-MOTION OF SERVO MECHANICAL PRESS
(2014-01-01)
Chen, Pin-Jyun
;
Cheng, Pi-Ying
;
Lin, Yu-Ting
;
Cheng, Tseng-Jen
;
機械工程學系
Servo press has the ability to improve the formability, quality, and productivity of metal products by working with various forming curves of slide. However, the operations of free-motion function are not very intuitional and efficient for most of servo presses so that it is difficult for operator to construct self-design forming curves. This article proposed a control system design of servo mechanical press which consists of an open-system controller and a real-time operating system to provide a convenient and efficient approach for operating free-motion function. In the proposed control system, operators determine the motion of slide by adjusting several control points of forming curve in a friendly and graphical interface. Then a calculating process based on the B-spline and curve fitting theories is applied in the controller to transform settings of operator into speed commands of servo motor automatically. Through this process, the controller is capable of driving servo motor smoothly and generating an expectant forming curve. In the latter section, some compare and analyses of setting of operator and actual results are demonstrated to verify the performance of proposed control system. By applying the proposed control system design to servo mechanical press, operators are able to create practical and satisfying forming curves more easily.
A Particle-Swarm-Driven Cross-Entropy Method for MIMO Signal Detection
(2010)
Wang, Chun-Lin
;
Lin, Yu-Ting
;
Su, Yu T.
;
傳播研究所
;
Institute of Communication Studies
In this paper, we apply simulation-based optimization methods to detect quadrature amplitude modulated (QAM) MIMO signals. The first one is the so-called Cross-Entropy (CE) method which enables the corresponding CE-based detector to provide bit-error-rate (BER) performance close to that achievable by the maximum-likelihood (ML) detector when the signal-to-noise ratio (SNR) is relatively low. Unfortunately, the performance curves exhibit error floors in the high SNR region. To improve the performance in the high SNR region, we borrow the concept of Particle Swarm Optimization (PSO) and refer to the resulting iterative detector as the Particle-Swarm-driven Cross-Entropy (PSD-CE) MIMO detector. This detector gives a significant BER performance improvement in the medium-to-high SNR region. We also consider the case when the channel state information is imperfect and suggest a robust detector structure based on a modified score function.
Characterization of the Drug Resistance Profiles of Patients Infected with CRF07_BC Using Phenotypic Assay and Ultra-Deep Pyrosequencing
(2017-01-20)
Huang, Szu-Wei
;
Li, Wei-You
;
Wang, Wen-Hung
;
Lin, Yu-Ting
;
Chou, Chih-Hung
The usefulness of ultra-deep pyrosequencing (UDPS) for the diagnosis of HIV-1 drug resistance (DR) remains to be determined. Previously, we reported an explosive outbreak of HIV-1 circulating recombinant form (CRF) 07_BC among injection drug users (IDUs) in Taiwan in 2004. The goal of this study was to characterize the DR of CRF07_BC strains using different assays including UDPS. Seven CRF07_BC isolates including 4 from early epidemic (collected in 2004 - 2005) and 3 from late epidemic (collected in 2008) were obtained from treatment-naive patient\'s peripheral blood mononuclear cells. Viral RNA was extracted directly from patient\'s plasma or from cultural supernatant and the pol sequences were determined using RT-PCR sequencing or UDPS. For comparison, phenotypic drug susceptibility assay using MAGIC-5 cells (in-house phenotypic assay) and Antivirogram were performed. In-house phenotypic assay showed that all the early epidemic and none of the late epidemic CRF07_BC isolates were resistant to most protease inhibitors (PIs) (4.4 - 47.3 fold). Neither genotypic assay nor Antivirogram detected any DR mutations. UDPS showed that early epidemic isolates contained 0.01 +/- 0.08% of PI DR major mutations. Furthermore, the combinations of major and accessory PI DR mutations significantly correlated with the phenotypic DR. The in-house phenotypic assay is superior to other conventional phenotypic assays in the detection of DR variants with a frequency as low as 0.01%.
Electrically switchable organo-inorganic hybrid for a white-light laser source
(2016-06-21)
Huang, Jui-Chieh
;
Hsiao, Yu-Cheng
;
Lin, Yu-Ting
;
Lee, Chia-Rong
;
Lee, Wei
We demonstrate a spectrally discrete white-light laser device based on a photonic bandgap hybrid, which is composed of a soft photonic crystal; i.e., a layer of dye-doped cholesteric liquid crystal (CLC), sandwiched between two imperfect but identical, inorganic multilayer photonic crystals. With a sole optical pump, a mono-, bi-, or tri-chromatic laser can be obtained and, through the soft photonic crystal regulated by an applied voltage, the hybrid possesses electrical tunability in laser wavelength. The three emitted spectral peaks originate from two bandedges of the CLC reflection band as well as one of the photonic defect modes in dual-mode lasing. Thanks to the optically bistable nature of CLC, such a white-light laser device can operate in quite an energy-saving fashion. This technique has potential to fulfill the present mainstream in the coherent white-light source.
Enhanced green laser activation by antireflective gate structures in panel transistors
(2008-02-11)
Shieh, Jia-Min
;
Chen, Chih
;
Lin, Yu-Ting
;
Pan, Ci-Ling
;
材料科學與工程學系
Antireflective gate structures of polycrystalline silicon (poly-Si) and silicon dioxide films enable postimplantation green continuous-wave laser annealing of all Si regions of green laser-crystallized panel Si transistors. About 40% of the incident laser-energy penetrates to the channels, owing to antireflective gate structures with the absorptive gate poly-Si, while 65% of the incident laser-energy enters the source/drain regions because of Fresnel reflections at the air/source (drain) interfaces. Such inverted laser-energy profiles and ascendant defect distributions along the channels/junctions/contact regions, yielded continuous, improved epilike Si microstructures over the entire active layer. The electron mobility of the transistors, 620 cm(2)/V s, approaches that of integrated-circuits transistors. (C) 2008 American Institute of Physics.
Enhanced hole mobility and reliability of panel epi-like silicon transistors using backside green laser activation
(2007-09-01)
Lin, Yu-Ting
;
Shieh, Jia-Min
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The hole mobility and reliability of green continuous-wave laser-crystallized epi-like Si transistors on glass panel substrates were enhanced by source/drain activation by backside green laser irradiation. Green laser energy was scanned uniformly across junctions since the gate structures included no interference, in an attempt to conduct super visible-laser lateral activation. The enhancement was thus explained by the formation of continuous improved epi-like Si microstructures with reduced grain defects and with a barely increased number of interface defects over the entire channel/junction. The hole mobility in such laser-activated devices was as high as 403 cm(2)/V center dot s, which doubles that of thermally activated devices.
Highly efficient inverted rapid-drying blade-coated organic solar cells
(2012-04-01)
Chang, Jung-Hao
;
Chen, Yi-Hong
;
Lin, Hao-Wu
;
Lin, Yu-Ting
;
Meng, Hsin-Fei
Efficient inverted bulk-heterojunction (BHJ) poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM) organic solar cells fabricated by rapid-drying blade-coated were demonstrated. Optimized self-organization interpenetration networks and donor/acceptor domain sizes were obtained while maintaining the smooth surface morphology. By integrating with low-temperature-processed sol-gel ZnO electron extraction layer, power conversion efficiency (PCE) up to 4.4% under AM1.5G 1 sun illumination is achieved, compared to fast drying but low efficiency (1.2%) and high efficiency but with long-time solvent annealing treatment (4.3%) control cells deposited by spin coating in chlorobenzene (CB) and 1,2-dichlorobenzene (DCB) solution, respectively. The novel deposition technique reveals a promising process for highly efficient, high throughput, stable morphology organic solar cells fabrication. (c) 2012 Elsevier B.V. All rights reserved.
Highly efficient organic solar cells using a solution-processed active layer with a small molecule donor and pristine fullerene
(2014)
Lin, Hao-Wu
;
Chang, Jung-Hao
;
Huang, Wei-Ching
;
Lin, Yu-Ting
;
Lin, Li-Yen
A new strategy has been successfully established to realize high efficiency small molecule organic solar cells with a solution-processed active layer composed of a small organic molecule as the donor and pristine C-70 as the acceptor. Using 1,2-dichlorobenzene as solvent, a homogeneous donor/C-70 blend active layer can be effectively formed either by spin- or bar-coating techniques. This method delivers organic solar cells with high power conversion efficiencies up to 5.9%.
Minimum ambient illumination requirement for legible electronic-paper display
(2011-01-01)
Lin, Yu-Ting
;
Hwang, Sheue-Ling
;
Jeng, Shie-Chang
;
Koubek, Richard J.
;
影像與生醫光電研究所
The intent of this study is to determine the minimum ambient illumination requirement for legible electronic-paper display. Not only the young but also the elderly were included as research subjects. Through the method of character-search task, the results indicated that the significant performance improvement of all subjects occurred at 52 lux on the search time and at 62 lux on the subjective visual fatigue. Therefore, the minimum ambient illumination requirement for legible electronic-paper display can be synthesized at 62 lux. This minimum point of ambient illumination for the young and the elderly represents that the reflective-type display started presenting its better legibility and the subjective visual fatigue started decreasing. As electronic-paper display technology applications gradually expand, product designers need notice this fundamental limit of electronic-paper display when they continue to create possible applications in the future. (C) 2010 Elsevier B.V. All rights reserved.
Mobility Management for Low-Latency Handover in SDN-Based Enterprise Networks
(2016)
Chen, Ce
;
Lin, Yu-Ting
;
Yen, Li-Hsing
;
Chan, Min-Cheng
;
Tseng, Chien-Chao
Low-latency handover is crucial to real-time traffic in wireless networks. This paper considers an enterprise network managed by emerging Software Defined Network (SDN) technology. For this networking environment, we propose a mobility management scheme named Mobility SDN (M-SDN) that reduces the traffic pause time caused by a host-initiated layer-2 handover. M-SDN performs handover preparation in parallel with the layer-2 handover that involves N-casting of active flows to every potential handover target. Handover preparation is enabled by efficient address resolution and location tracking. We have implemented a prototype of M-SDN and conducted several experiments to evaluate the performance of M-SDN. Experimental results show that M-SDN effectively reduces the impact of layer-2 handovers without any modification on mobile devices.
Photo-assisted recovery in ammonia sensor based on organic vertical diode
(2019-04-01)
Lin, Yu-Ting
;
Yu, Shang-Yu
;
Zan, Hsiao-Wen
;
Yeh, Ping-Hung
;
Lu, Chia-Jung
In this article, a photo-assisted gas sensor was provided to solve the slow recovering issue of the organic gas sensor. The proposed organic gas sensor can detect ammonia in parts-per-billion regime in 30 s and can be multiple uses, but the long recovery time about 5 min places difficulty to realize rapidly multiple-time sensing. Therefore, we used the photo-absorption ability in the organic semiconductor layer to generate the photocurrent and hence to compensate the current drop due to the ammonia absorption. The recovery time was significantly reduced to be only 1 min. The specific wavelength was also found to match the absorption spectrum in different organic sensing materials. As a comparison, the quartz crystal microbalance (QCM) was used to clarify the gas absorption and desorption mechanism. It is believed that this photo-assisted gas detection could be a general method to solve the slow recovery in organic-based gas sensors.
Room-temperature-operated organic-based acetone gas sensor for breath analysis
(2018-05-01)
Chuang, Ming-Yen
;
Lin, Yu-Ting
;
Tung, Ting-Wei
;
Chang, Liang-Yu
;
Zan, Hsiao-Wen
The major merits of organic-based sensors include their low cost, room-temperature operation, and small size. However, their sensitivity and selectivity are concerning, especially in the application of breath analysis. In this work, organic-based sensors were developed based on cylindrical nano-pore structures, which enhanced the sensitivity down to ppb levels. The sensing performance was demonstrated both in pure nitrogen and ambient air. The sensor constructed with poly[(9,9-dioctylfluoreny1-2,7-diy1)-co-(4,41(N-(4-sec-butylphenyl)diphenylamine)] (TFB) exhibited a 5% sensing response to 300 ppb of acetone in ambient air. In addition, the sensor's response to other major breath components, including nitric oxide, ethanol, carbon dioxide, and ammonia, was also established. The results showed that the TFB sensor also exhibited a good response to ammonia. Therefore, a humidification tube was designed as an ammonia filter to improve selectivity. The concept of integrating a highly sensitive sensor with a customized sensing system shows promise for medical applications. (C) 2018 Elsevier B.V. All rights reserved.
Small mechanical press with double-axis servo system for forming of small metal products
(2013-10-01)
Cheng, Pi-Ying
;
Chen, Pin-Jyun
;
Lin, Yu-Ting
;
機械工程學系
;
Department of Mechanical Engineering
Multi-axis servo systems have been applied to many machine tools in recent decades, but they are not commonly used for press machines. They are particularly uncommon for small presses because it is still believed that the precision of a small press is dependent on the precision of its components and parts. However, high-precision components and parts are difficult to manufacture and assemble, so the costs of small precision presses are roughly equal to or higher than those of large press machines. Moreover, the accuracy of conventional small presses worsens over long operation times, particularly when dealing with off-center loading frequency. Therefore, we propose a small mechanical press with an adjustable driving system, using a slide and double-axis servo system, for manufacturing small products. Through this proposed design, we expect higher-quality products to be produced for lesser cost than conventional small presses.
Stability of continuous-wave laser-crystallized epilike silicon transistors
(2007-02-12)
Lin, Yu-Ting
;
Chen, Chih
;
Shieh, Jia-Min
;
Pan, Ci-Ling
;
材料科學與工程學系
Stability of high-hole-mobility thin-film transistors (TFTs) on single-grainlike silicon channels formed by continuous-wave laser crystallization during hot-carrier stressing (HCS) was studied. As channel layers become thicker, laser-mediated channel crystallinity increases, increasing channel roughness. On such epilike polycrystalline silicon substrates, the poorer interface quality for thicker channels, even those with lower tail-state densities of grain traps, is responsible for the extensive charge trapping and creation of deep-state densities in the fabricated TFTs due to HCS. Hence, on a thin channel with a thickness of 50 nm and ultrasmooth surfaces, HCS hardly degrades the electrical parameters of the devices. (c) 2007 American Institute of Physics.
Surface defect engineering: gigantic enhancement in the optical and gas detection ability of metal oxide sensor
(2016-01-01)
Wang, Wen-Chieh
;
Lai, Chun-Yen
;
Lin, Yu-Ting
;
Yua, Tzu-Hsuan
;
Chen, Zong-Yi
In this work, the detection ability of nanosensors can be improved extraordinarily via surface defect engineering. A kinked SnO2-X/SnO2 nanostructure was fabricated by tuning the oxygen flow, and this kinked SnO2-X/SnO2 nanostructure was used to study the mechanism of surface defect (oxygen vacancy, V-O) effects via electric measurements. For UV light sensing, the response of the SnO2-X NW device is always better than the SnO2 NW device, and is two orders higher under pure O-2 surrounding conditions. The detection mechanism can be clarified by changing the detection environment (oxygen concentration) and the UV light detection sensitivity can be improved by increasing the surface V-O density. Furthermore, the SnO2-X NW device is very sensitive to its surrounding environment due to the high surface V-O density. Hence, CO/O-2 alternate-detection was used to verify our hypothesis; the results show that the SnO2-X NW device presents great detection abilities, compared with the SnO2 NW device. The sensitivity of the SnO2-X NW device is two orders higher and the reset/response time is faster, compared with the SnO2 NW device. To verify this hypothesis, the polycrystalline structure was fabricated to prove that the detection ability of metal oxide nanosensors can be improved gigantically by increasing surface defect amounts.
Tracking Dynamic Arterial Pressure Waveform on Vasoactive Medication Via Manifold Learning Method
(2019-04-01)
Lin, Yu-Ting
;
Lin, Te-Sheng
;
Wu, Hau-tieng
;
Chang, Cheng-Hsi
;
Wang, Shen-Chih
Trap-state density in continuous-wave laser-crystallized single-grainlike silicon transistors
(2006-06-05)
Lin, Yu-Ting
;
Chen, Chih
;
Shieh, Jia-Min
;
Lee, Yao-Jen
;
Pan, Ci-Ling
This investigation characterizes electrical characteristics of continuous-wave green laser-annealed single-grainlike silicon thin-film transistors in relation to trap-state densities. As laser power increases, highly crystalline channels form, reducing tail-state densities to as low as 3 X 10(19) eV-' cm(-3). This occurrence is responsible for high field-effect electron mobility of 284 cm(2)/Vs. In contrast, increasing laser power initially reduces the deep-state density and then increases it to 3 X 1016 eV(-1) cm(-3). This reversal in deep-state density and thus in the subthreshold slope as well as a saturating reduction in threshold voltage are associated with the formation of extra interface defects caused by laser-crystallization-enhanced surface roughness. (c) 2006 American Institute of Physics.
Trend transformation of drain-current degradation under drain-avalanche hot-carrier stress for CLC n-TFTs
(2009-08-01)
Hsieh, Zhen-Ying
;
Wang, Mu-Chun
;
Chen, Chih
;
Shieh, Jia-Min
;
Lin, Yu-Ting
Continuous-wave green laser-crystallized (CLC) single-grain-like polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs) demonstrate the higher electron mobility and turn-on current than excimer laser annealing (ELA) poly-Si n-TFTs. Furthermore, high drain voltage accelerates the flowing electrons in n-type channel, and hence the hot-carriers possibly cause a serious damage near the drain region and deteriorate the source/drain (S/D) current. in this study, at high drain stress voltage, it appears that CLC TFT was degraded in the initial stress time (before 50 s), but the drain current was enhanced after 50 s. After 50 s stress time, the amount of grain boundary trap states near the drain side was getting large and the reflowing holes damaged the source region or injected into gate oxide near source side as well. (C) 2009 Elsevier Ltd. All rights reserved.