Browsing by Author "Lin, Yue-Cin"

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Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer
(2010-05-27)
Chang, Edward Yi
;
Tang, Shih-Hsuan
;
Lin, Yue-Cin
The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−x buffer layer.