Browsing by Author "Lin, Yueh Chin"

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Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
(2013-06-01)
Hai Dang Trinh
;
Minh Thuy Nguyen
;
Lin, Yueh Chin
;
Quoc Van Duong
;
Hong Quan Nguyen
From the Fowler-Nordheim (FN) current-voltage (I-V) characteristic and X-ray photoelectron spectroscopy (XPS) analysis, the conduction band offset of 2.73 +/- 0.1 eV and the valence band offset of 3.76 +/- 0.1 eV have been extracted for the atomic-layer-deposition (ALD) Al2O3/InSb structure. By these analyses, the parameters of an Al2O3 film including bandgap, electron affinity, and electron effective mass are also deduced. The capacitance-voltage and I-V characteristics of ALD Al2O3/InSb at different deposition temperatures indicate the modification of the Fermi level in InSb to 0.09 eV lower than that in metal side of the sample deposited at 250 degrees C as compared to the samples deposited at lower temperatures. (C) 2013 The Japan Society of Applied Physics
Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells
(2018-08-30)
Liao, Shun Sing
;
Chuang, Chuan Lung
;
Lin, Yueh Chin
;
Dee, Chang Fu
;
Majlis, Burhanuddin Yeop
In this study, we show that the efficiency and carrier life time of multi-crystalline silicon solar cells were significantly improved by using a low pressure (20,000 Pa) and temperature (650 degrees C similar to 750 degrees C) environment grown thermal oxide (TO) as the surface passivation layer. In this experiment, during the first stage, the oxidation process was done at 650 degrees C and a lower pressure of 20,000 Pa for 2 mins under the flow a gas mixture of N-2/O-2 in ratio of 2:1. In the second stage, a temperature of 750 degrees C was used at the same pressure for the post-growth annealing process under a pure N-2 ambient for 25 mins. Consequently, conversion efficiency was significantly increased by 0.55% with the surface passivation layer grown by low pressure and temperature TO process. The sheet resistance, carrier lifetime, internal quantum efficiency (IQE), increased by 6.32 Omega/sq., 22.18 mu s, 4.33%, respectively, and the average reflection was reduced of 0.62%. Thus, the low pressure and temperature thermal oxidation process was an efficient way to increase the efficiency of the multi-crystalline silicon solar cells.
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
(2016-08)
Quang Ho Luc
;
Cheng, Shou Po
;
Chang, Po Chun
;
Huy Binh Do
;
Chen, Jin Han
In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO2/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET). Excellent quality of gate dielectric is enabled by utilizing the PEALD-aluminum nitride as a pre-gate interfacial layer, followed by a post-gate remote-plasma gas treatment. In-situ PEALD treatment led to enhanced dc characteristics, such as drain current, peak transconductance, subthreshold swing, OFF leakage current, and effective electron mobility. X-ray photoelectron spectroscopy analysis indicates a reduction of In-and Ga-related signals. Furthermore, small drain current hysteresis and low-interface state density (D-it) value confirm a high interfacial quality for the high-k/III-V structure. Overall, the PEALD passivation for HfO2/In0.53Ga0.47As interface shows a remarkable improvement on the MOSFET performance.
Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer
(2017-01-01)
Liao, Shun Sing
;
Lin, Yueh Chin
;
Chuang, Chuan Lung
;
Chang, Edward Yi
;
材料科學與工程學系
In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780 degrees C, a growth time of 5 min, and with N-2/O-2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750 degrees C, growth time of 20 min, and under pure N-2 gas environment. Carrier lifetime was increased to 15.45 mu s, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells.
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
(2013-05-01)
Hai Dang Trinh
;
Lin, Yueh Chin
;
Chang, Edward Yi
;
Lee, Ching-Ting
;
Wang, Shin-Yuan
The characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature > 300 degrees C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
(2014-08-01)
Quang Ho Luc
;
Chang, Edward Yi
;
Hai Dang Trinh
;
Lin, Yueh Chin
;
Hong Quan Nguyen
The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al2O3/In0.53Ga0.47As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C-V) hysteresis, frequency dispersion, and interface state densities (D-it) are demonstrated on the Al2O3/n, p-In0.53Ga0.47As MOS capacitors. The excellent C-V behaviors are observed on both type of In0.53Ga0.47As-based MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In0.53Ga0.47As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized.
Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
(2013-10-01)
Lin, Yueh Chin
;
Trinh, Hai Dang
;
Chuang, Ting Wei
;
Iwai, Hiroshi
;
Kakushima, Kuniyuki
In this letter, a high-k composite oxide composed of La2O3 and HfO2 is investigated for n-In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3 (0.8 nm)/HfO2(0.8 nm) on InGaAs with post deposition annealing at 500 degrees C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D-it) of 7.0 x 10(11) cm(-2)eV(-1), small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
(2017-08-01)
Lin, Yueh Chin
;
Huang, Yu Xiang
;
Huang, Gung Ning
;
Wu, Chia Hsun
;
Yao, Jing Neng
This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate dielectric showed good oxide film quality and excellent HfLaOx/GaN interface properties, as demonstrated by the measured C-V characteristics. Consequently, the E-mode MIS-HEMT was determined to show good V-th stability with only a slight increase in the dynamic R-on after high drain bias stress.
Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
(2017-09-01)
Chiu, Yu Sheng
;
Luc, Quang Ho
;
Lin, Yueh Chin
;
Huang, Jui Chien
;
Dee, Chang Fu
A plasma enhanced atomic layer deposition (PEALD) HfO2/AlN dielectric stack was used as the gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) for high-frequency power device applications. The capacitance-voltage (C-V) curves of the HfO2/AlN/GaN MOS capacitor (MOSCAP) showed a small frequency dispersion along with a very small hysteresis (similar to 50 mV). Moreover, the interface trap density (D-it) was calculated to be 2.7 x 10(11)cm(-1)V(-1) s(-1) at 150 degrees C. Using PEALD-AlN as the interfacial passivation layer (IPL), the drain current of the HfO2/AlN MOS-HEMTs increased by about 46% and the gate leakage current decreased by six orders of magnitude as compared with those of the conventional Schottky gate AlGaN/GaN HEMTs processed using the same epitaxial wafer. The 0.3-mu m-gate-length HfO2/AlN/AlGaN/GaN MOS-HEMTs demonstrated a 2.88W/mm output power, a 23 dB power gain, a 30.2% power-added efficiency at 2.4 GHz, and an improved device linearity as compared with the conventional AlGaN/GaN HEMTs. The third-order intercept point at the output (OIP3) of the MOS-HEMTs was 28.4 as compared with that of 26.5 for the conventional GaN HEMTs. Overall, the MOS-HEMTs with a HfO2/AlN gate stack showed good potential for high-linearity RF power device applications. (C) 2017 The Japan Society of Applied Physics
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
(2019-07-01)
Yao, Jing Neng
;
Lin, Yueh Chin
;
Lin, Min Song
;
Huang, Ting Jui
;
Hsu, Heng Tung
In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, I-ON/I-OFF ratio of 2.4x10(4), an off-state gate leakage current of less than 5x10(-6) A/mm and a G(m,max) of 1100 mS/mm at V-DS = 0.5 V. When increasing the drain-source bias (V-DS) to 1.0 V, the G(m,max) increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications.
Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
(2017-10-16)
Hsiao, Chih Jen
;
Kakkerla, Ramesh Kumar
;
Chang, Po Chun
;
Lumbantoruan, Franky Juanda
;
Lee, Tsu Ting
In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 x 10(6) cm(-2) and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm(2) V-1 s(-1) with a carrier concentration of 1.2 x 10(17) cm(-3) is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future. Published by AIP Publishing.
High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devices
(2016-05)
Chiu, Yu Sheng
;
Liao, Jen Ting
;
Lin, Yueh Chin
;
Liu, Shin Chien
;
Lin, Tai Ming
High-kappa cerium oxide (CeO2) was applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a gate insulator and a passivation layer by molecular beam deposition (MBD) for high-power applications. From capacitance-voltage (C-V) measurement results, the dielectric constant of the CeO2 film was 25.2. The C-V curves showed clear accumulation and depletion behaviors with a small hysteresis (20 mV). Moreover, the interface trap density (D-it) was calculated to be 5.5 x 10(11) eV(-1)cm(-2) at 150 degrees C. A CeO2 MOS-HEMT was fabricated and demonstrated a low subthreshold swing (SS) of 87 mV/decade, a high ON/OFF drain current ratio (I-ON/I-OFF) of 1.14 X 10(9), and a low gate leakage current density (J(leakage)) of 2.85 X 10(-9)Acm(-2) with an improved dynamic ON-resistance (R-ON), which is about one order of magnitude lower than that of a conventional HEMT. (C) 2016 The Japan Society of Applied Physics
Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
(2015-12-01)
Huy Binh Do
;
Quang Ho Luc
;
Minh Thien Huu Ha
;
Hu, Chenming Calvin
;
Lin, Yueh Chin
AlN has successfully been applied to passivate the oxide/III-V interface; however, it changes both the metal work function (WF) and band alignment of the gate-stack and, thus, affects the power consumption of the devices. We found that the AlN layer induces a dipole delta = 0.18 eV between HfO2 and substrate. The dipole value obtained from capacitance-voltage characteristics performs good agreement with the results of X-ray photoelectron spectroscopic measurements. The effective WF of Ni is found to be 5.55 eV, which is larger than its WF in vacuum. The valance band offset and the conduction band offset of HfO2 with AlN/In0.53Ga0.47As are found to be 2.82 and 2.06 eV, respectively.
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
(2018-03-01)
Luc, Quang Ho
;
Yang, Kun Sheng
;
Lin, Jia Wei
;
Chang, Chia Chi
;
Huy Binh Do
This letter presents a remote NH3/N-2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFET. The plasma treatment enhanced drive current (I-DS), transconductance (G(m)), subthreshold swing (SS), flicker noise, and positive bias temperature lifetime, suggesting that this plasma treatment significantly improves the quality of the etched In0.53Ga0.47As channel interface. In0.53Ga0.47As FinFETs and gate-all-around FETs were fabricated with the proposed in situ remote-plasma treatment and characterized.
Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application
(2017-05-01)
Huy Binh Do
;
Quang Ho Luc
;
Minh Thien Huu Ha
;
Sa Hoang Huynh
;
Tuan Anh Nguyen
Use of the Mo/Ti/AlN/HfO2 metal/dielectric stack to increase the permittivity of HfO2 for low power consumption InGaAs-based MOSFET is investigated in this letter. The dielectric constant of HfO2 was found to increase by 47%, from 17 to 25, after Ti doping without affecting the interface trap density around the mid-gap of the MOSCAPs. A strong inversion behavior with low leakage current for the MOSCAP was also observed. The gate voltage needed to tune the Fermi level of InGaAs channel was found to be smaller for the Ti-doped HfO2 sample as compared with the sample with un-doped HfO2. The increase of the dielectric constant of HfO2 after Ti doping combined with the use of Ti gate metal, which has the work function level near the conduction band edge of InGaAs, makes the proposed Mo/Ti/HfO2 (Ti) stackideal for future lowpower consumption InGaAs-based NMOS applications.
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
(2016-12)
Do, Huy Binh
;
Luc, Quang Ho
;
Ha, Minh Thien Huu
;
Huynh, Sa Hoang
;
Hu, Chenming Calvin
To achieve low power consumption for CMOS devices, the gate metals must have effective work function (EWF) aligned with the band edges of the channel material and have a small WF variation (WFV). The multilayer TiNi alloys have been successfully applied as the gate metals for HfO2/In0.53Ga0.47As MOS devices in this paper. The EWF of TiNi alloys was found to increase from 4.41 eV for as-deposited sample to 4.62 eV after the alloy was annealed due to the diffusion of Ni atoms into Ti layer. The multilayer TiNi alloy remained amorphous phase with small WFV until annealed at 600 degrees C. The TiNi alloy is thermally more stable as compared with either Ti or Ni metal, because the TiOxNi interfacial layer prevents the diffusion of Ni atoms into HfO2 film and the further reaction of Ti with HfO2. The results can be applied for InGaAs nMOS fabrication.
Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials
(2016-09)
Huy Binh Do
;
Quang Ho Luc
;
Minh Thien Huu Ha
;
Sa Hoang Huynh
;
Hu, Chenming
Accurate determination of the flat band voltage (V-FB) is very important for extracting the effective work function of metal, and it will affect the prediction of the threshold voltage of the metal-oxide-semiconductor (MOS) devices. A modified method to accurately determine V-FB of the In0.53Ga0.47As n-type MOS device is presented. The effects of capacitance voltage hysteresis and interface trap density at the oxide/semiconductor interface on the accuracy of the extracted V-FB values are discussed. The results are also applicable to other MOS devices with high mobility channel materials.
Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
(2015-12-01)
Luc, Quang Ho
;
Do, Huy Binh
;
Ha, Minh Thien Huu
;
Hu, Chenming Calvin
;
Lin, Yueh Chin
The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) has been studied. Excellent interface quality of high-k/III-V is achieved by aluminum nitride (AlN) interfacial passivation layer, including strong inversion behaviors and unpinned Fermi level. The band alignment of HfO2/AlN/In0.53Ga0.47As structure with the valence band offsets of 2.81 +/- 0.1 eV and the conduction band offsets of 1.9 +/- 0.1 eV was obtained. Better interface and optimized high-k dielectric qualities are achieved using post remote-plasma treatment with either N-2/H-2 or NH3 gases. Sub-nanometer equivalent oxide thickness HfO2/AlN/In0.53Ga0.47As MOSCAPs with low interface trap density and low leakage current density have been characterized.
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
(2017-08-01)
Do, Huy Binh
;
Luc, Quang Ho
;
Ha, Minh Thien Huu
;
Huynh, Sa Hoang
;
Nguyen, Tuan Anh
The degeneration of the metal/HfO2\ interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2- and OH- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo,Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET. (C) 2017 Author(s).