Browsing by Author "Lin, Z. C."

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Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires
(2007-02-21)
Lin, Z. C.
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Hsieh, W. H.
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Lee, C. P.
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Suen, Y. W.
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電子工程學系及電子研究所
Strong asymmetry of electron mobility in InGaAs/InAlAs heterostructures (lattice matched to InP) with the presence of InAs quantum wires was observed. Self-assembled InAs quantum wires, embedded in an InGaAs matrix close to the hetero-interface, has a strong effect in electron conduction in the interface channel. The low temperature mobility for electrons moving parallel to the quantum wires is much higher than that of electrons moving perpendicular to the wires. The asymmetry in mobility is attributed to the difference in scattering cross section of the quantum wires in these two directions.
Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (100) InP substrates
(2008-01-01)
Lin, Z. C.
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Lin, S. D.
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Lee, C. P.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (M BE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires. (C) 2007 Elsevier B.V. All rights reserved.
Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy
(2006-09-01)
Lin, S. D.
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Lin, Z. C.
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Lee, C. P.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Self-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different deposition thicknesses. The XTEM images clearly showed composition modulation in the overgrown InGaAs matrix. The reason for this composition modulation is explained by strain field compensation and surface energy minimization. (c) 2006 American Institute of Physics.