Browsing by Author "Lin, ZW"

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Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications
(2003-11-17)
Liu, PT
;
Chang, TC
;
Tsai, TM
;
Lin, ZW
;
Chen, CW
A direct patterning technology of low-permittivity silicate-based polymer is investigated with electron-beam lithography for multilevel interconnections. The smallest feature size of 60 nm for damascene lines can be directly patterned in the silicate film. In this direct patterning, dielectric regions exposed by electron beam are crosslinked and form desirable patterns, while the others are dissolvable in an aqueous solution containing 2.38% tetramethylammonium hydroxide. With an optimum condition of electron-beam lithography, the electron-beam-irradiated silicate exhibits superior dielectric properties than that of the furnace-cured silicate film, due to minimizing the break of Si-H bonds and moisture uptake. The explanation is in agreement with the analyses of Fourier transform infrared spectroscopy and thermal desorption spectroscopy. (C) 2003 American Institute of Physics.
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
(2004-01-30)
Chang, TC
;
Yan, ST
;
Liu, R
;
Lin, ZW
;
Aoki, H
In this paper, electrical characterization of low-k dielectric methyl-silsesquiazane (MSZ) is presented. Thermal stress and bias temperature stress (BTS) were utilized to evaluate the impact of Cu penetration on dielectric properties. In the investigation of thermal stress performed by furnace annealing, the leakage mechanism of Al- and Cu-gate MIS capacitors is competed by the decrease of the interfacial states between metal and dielectric and the increase of defects resulted from Cu penetration. Also, the leakage conduction mechanism at high electric field is deduced from Schottky emission in conjunction with space-charge-limited current conduction (SCLC) through BTS methods. (C) 2003 Elsevier B.V. All rights reserved.
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
(2004-11-22)
Chang, TC
;
Yan, ST
;
Liu, PT
;
Lin, ZW
;
Aoki, H