Browsing by Author "Lin Pang"
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Item type:Item, Gate controlled field emission triode and process for fabricating the same(2012-09-18) ;Lee Chia-Ying ;Li Seu-Yi ;Lin PangTseng Tseung-YuanThis invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.Item type:Item, HIGH ENERGY DENSITY ASYMMETRIC PSEUDOCAPACITOR AND METHOD OF MAKING THE SAME(2015-10-22) ;Tseng Tseung-Yuen ;Hung Chung-JungLin PangA high energy density asymmetric pseudocapacitor includes a cathode plate, an anode plate, and a separator. The cathode plate includes a first conductive substrate and a porous cathode film formed on the first conductive substrate. The porous cathode film includes a carbon nano-tube network and a plurality of composite flakes. Each of the composite flakes contains graphene, a transition metal compound and carbon nano-tubes. The anode plate includes a second conductive substrate and an anode film formed on the second conductive substrate. The anode film contains graphene and carbon nano-tubes.