Browsing by Author "Liou, B. H."

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Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors
(2010-06-01)
Cheng, C. H.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
;
Chin, Albert
In this work, we studied a TiO(2) mixed LaAlO(3) dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al(2)O(3) doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO(2)-based dielectrics with the introduction of Al(2)O(3) might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.
Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors
(2010-06-01)
Cheng, C. H.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
;
Chin, Albert
In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.
Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors
(2010-01-01)
Cheng, C. H.
;
Deng, C. K.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
We proposed two lanthanide-oxide mixed TiO(2) dielectrics for metal-insulator-metal (MIM) capacitors using TiO(2)-LaAlO (TLAO) and TiO(2)-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO(2) dielectrics with the introduction of LaAlO(3) and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.
Lanthanide-Oxides Mixed TiO2 Dielectrics for High-kappa MIM Capacitors
(2010-01-01)
Cheng, C. H.
;
Deng, C. K.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2-LaAlO (TLAO) and TiO2-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.