Browsing by Author "Liou, Bo-Heng"

Now showing 1 - 6 of 6

Effect of Ta(2)O(5) Doping on Electrical Characteristics of SrTiO(3) Metal-Insulator-Metal Capacitors
(2009-08-01)
Huang, Ching-Chien
;
Cheng, Chun-Hu
;
Liou, Bo-Heng
;
Yeh, Fon-Shan
;
Chin, Albert
The effect of Ta(2)O(5) doping on electrical characteristics of SrTiO(3) (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta(2)O(5)-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V(2) and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physics
Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal-Insulator-Metal Capacitors
(2009-08-01)
Huang, Ching-Chien
;
Cheng, Chun-Hu
;
Liou, Bo-Heng
;
Yeh, Fon-Shan
;
Chin, Albert
The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V-2 and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physics
High-Performance Metal-Insulator-Metal Capacitor Using Quality Properties of High-kappa TiPrO Dielectric
(2009)
Huang, Chingchien
;
Cheng, Chun-Hu
;
Lee, Ko-Tao
;
Liou, Bo-Heng
;
機械工程學系
In this paper, we demonstrate excellent material characteristics of TiPrO and high-density Ti(x)Pr(1-x)O (x approximate to 0.67) metal-insulator-metal (MIM) capacitors using high-work-function (similar to 5.3 eV) Ir top electrode. Low leakage current of 7x10(-9) A/cm(2) at -1 V and high 16 fF/mu m(2) capacitance density are achieved for 400 degrees C anneal TiPrO, which also meets the International Technology Roadmap for Semiconductors goals (at year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV). Furthermore, the improved high 20 fF/mu m(2) capacitance density TiPrO MIM was obtained at a higher anneal temperature, where a low leakage current of 1.2x10(-7) A/cm(2) was measured at -1 V. These good performances indicate that TiPrO MIM is suitable for analog/radio frequency integrated circuits.
Performance Improvement of Metal-Insulator-Metal Capacitors Using Postmetallization-Annealed Treatment on the Al(2)O(3)/TiO(2)/Al(2)O(3) Film
(2009-01-01)
Huang, Chingchien
;
Cheng, Chun-Hu
;
Lee, Kaotao
;
Liou, Bo-Heng
;
機械工程學系
This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al(2)O(3)/TiO(2)/Al(2)O(3) laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO(2) capacitors, deposition of the Al(2)O(3) layer enables significant leakage current reduction while maintaining good electrical performance. For an Al(2)O(3)/TiO(2)/Al(2)O(3) film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4x10(-9) A/cm(2) at 1 V for 18.3 fF/mu m(2) density Al(2)O(3)/TiO(2)/Al(2)O(3) MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV).
Performance Improvement of Metal-Insulator-Metal Capacitors Using Postmetallization-Annealed Treatment on the Al2O3/TiO2/Al2O3 Film
(2009-01-01)
Huang, Chingchien
;
Cheng, Chun-Hu
;
Lee, Kaotao
;
Liou, Bo-Heng
;
機械工程學系
This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al2O3/TiO2/Al2O3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO2 capacitors, deposition of the Al2O3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al2O3/TiO2/Al2O3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4x10(-9) A/cm(2) at 1 V for 18.3 fF/mu m(2) density Al2O3/TiO2/Al2O3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV).
Thermal stability and electric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with nano-Cr interlayer
(2006-12-20)
Ho, Chia-Cheng
;
Chiou, Bi-Shiou
;
Chang, Li-Chun
;
Chou, Chen-Chia
;
Liou, Bo-Heng
A novel sandwich structure of Ba0.7Sr0.3TiO3/Cr/Ba0.7Sr0.3TiO3 (BST/Cr/BST) was sputtered onto Pt/Ti/SiO2/Si substrate. With the insertion of a Cr layer, the leakage currents are decreased and the thermal stability of the specimens is enhanced. Temperature coefficient of capacitance (TCC) of specimens with BST(200 nm)/Cr(2 nm)/BST(200 nm) multifilms can achieve about 83% lower than those with BST (400 nm) monolayer. However, the dielectric constant of the BST(200 nm)/Cr(2 nm)/BST(200 nm) multifilms decreases to about 37% of that BST monolayer. The leakage current densities under an electric field of 125 kV/cm at 90 degrees C are 4 x 10(-4) A/cm(2) and 9 x 10(-1) A/cm(2) for BST(200 nm)/Cr(2 nm)/BST(200 nm) and monolayer BST (400 nm), respectively. X-ray diffraction results indicate the formation of a CrO3 secondary phase after annealing at 700 degrees C or above in O-2 atmosphere. The root causes for the improvement of leakage currents and thermal stability with the insertion of nano-Cr interlayer are explored. The results show the insertion of Cr-nanolayer improves the electric properties for application in capacitors. (c) 2006 Elsevier B.V All rights reserved.