Browsing by Author "Liou, Jui-Min"

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High Optical Conversion Capability within the Interface between Graphene and Si under Zero Bias and Visible to Near Infrared Regime
(2016)
Hsiao, Chin-Chiang
;
Wei, Mao-Qugn
;
Ren, Ting-Ting
;
Chen, Bo-Yi
;
Li, Mei-Yi
In this study, we demonstrate the high performance few-layer graphene-Si sensor with high photoresponsivity of 95 mA/W, operation behaviors with external bias as low as 0 V, and broadband operating light wavelength from 400 nm to 1000 nm by combining high transparency of few-layer graphene and n-type silicon. Although external bias benefits the photoresponsivity, the larger dark current is the price to pay. Under zero bias, the different Si substrate, n-type or p-type, provides variant Schottky barrier height guiding different photoelectrical behavior also be investigated in this work. According to the experimental results, few-layer graphene over p-type silicon (FLG p-Si) has one order higher the dark current of the few-layer graphene over n-type silicon (FLG n-Si) to ensure that the detection region between few-layer graphene and n-type silicon profits high optical-to-electrical conversion. Further, the capability of photocurrent-to-photovoltage conversion directly in one device is also provided and verified to profit the integration proposed device with periphery circuit easily.
High Photothermal Properties in Silicon Nanostructures
(2016)
Ren, Ting-Ting
;
Wei, Mao-Qugn
;
Hsiao, Chin-Chiang
;
Chen, Bo-Yi
;
Li, Mei-Yi
This research describes the p-type nanostalactites (p-type NS) with high photothermal conversion capability has been demonstrated by rapid INC process without extra heat treatment. In optical property, p-type NS has ultralow reflectance below 5 % and high light absorption due to rough structures in the broadband wavelength (350 nm -1100 nm). It looks like a black body. Silicon, an indirect band material, can release thermal energy during the recombination process of photo-generated electron-hole pairs. P-type NS converts photon energy into heat rapidly and then photothermal effect occurs. Then, the temperature change of p-type NS is faster in 10 second than bulk p-type silicon. These nanostructures can not only enhance thermal conversion efficiency but be regarded as a great heat absorber.