Browsing by Author "Liu, C"

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A modified multi-chemicals spray cleaning process for post-CMP cleaning application
(1998-01-01)
Wang, YL
;
Liu, C
;
Feng, MS
;
Tseng, WT
;
材料科學與工程學系
Chemical mechanical planarization (CMP) has become widely accepted for the planarization of device interconnect structures in deep submicron semiconductor manufacturing. Attractive features of CMP include (i) global planarization and (ii) low defect and contamination level. The main challenge of cleaning is to remove the residual particles as well as the metallic contamination. In this paper, a modified post-CMP clean up-multi-chemicals spray cleaning process-is addressed in detail. This new process has been successfully applied to both oxide and tungsten CMP cleaning. The process provides comparable defect performance and excellent removal of metallic contamination to the scrubbing process which has been widely accepted in current post-CMP cleaning usage. The new clean up development strategy also contributes to their low cost of ownership (Co0) and good process flexibility as well as the minimizing cross-contamination. (C) 1998 Elsevier Science S.A.
A modified multi-chemicals spray cleaning process for post-CMP cleaning application
(1998-01-01)
Wang, YL
;
Liu, C
;
Feng, MS
;
Tseng, WT
;
材料科學與工程學系
Chemical mechanical planarization (CMP) has become widely accepted for the planarization of device interconnect structures in deep submicron semiconductor manufacturing. Attractive features of CMP include (i) global planarization and (ii) low defect and contamination level. The main challenge of cleaning is to remove the residual particles as well as the metallic contamination. In this paper, a modified post-CMP clean up-multi-chemicals spray cleaning process-is addressed in detail. This new process has been successfully applied to both oxide and tungsten CMP cleaning. The process provides comparable defect performance and excellent removal of metallic contamination to the scrubbing process which has been widely accepted in current post-CMP cleaning usage. The new clean up development strategy also contributes to their low cost of ownership (Co0) and good process flexibility as well as the minimizing cross-contamination. (C) 1998 Elsevier Science S.A.
Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFT's
(1998-11-01)
Yeh, CF
;
Chen, TJ
;
Liu, C
;
Shao, JQ
;
Cheung, NW
This work applied, for the first time, plasma immersion ion implantation (PIII) for source/drain doping on low-temperature processed polysilicon thin-film transistors (poly-Si TFT's), Experimental results indicate that PIII doping can provide adequate dopant concentration and junction depth for source/drain. In addition, H-2-diluted phosphorus pill can promote dopant activation more efficiently during RTA at 600 degrees C than with conventional ion implantation (II) technology. The excellent characteristics of PIII doped poly-Si TFT's resemble those of conventional II doped ones.
Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
(1997-10-31)
Wang, YL
;
Liu, C
;
Chang, ST
;
Tsai, MS
;
Feng, MS
Alkyl siloxane-based low-dielectric-constant (low-k) spin-on-glass (SOG) thin films with varying amounts of organic content were subjected to polishing experiments using silica-and ZrO2-based slurries with a variety of additives, As the amount of organic content in SOG increases, the chemical-mechanical polishing (CMP) removal rate decreases with silica-based potassium hydroxide-added slurry. On the other hand, zirconia-based slurry resulted in higher removal rates for both SOG (>400 nm/min) and thermal oxide and an adjustment in polish selectivity (related to thermal oxide) ranging from 1.2 to 9.1 can be achieved by adding various amounts of tetra-alkyl substituted ammonium hydroxide. Post-CMP materials characterization by Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) shows the chemical stability and CMP compatibility of SOG thin films. (C) 1997 Elsevier Science S.A.
Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing
(1997-10-31)
Wang, MT
;
Tsai, MS
;
Liu, C
;
Tseng, WT
;
Chang, TC
Copper chemical mechanical polishing (Cu-CMP) was investigated using slurries containing alumina abrasive and various types and concentrations of oxidizer, as well as benezotriazole (BTA) additive. We found that the corrosion rate of copper film decreases with increasing BTA concentration in 3 vol.% HNO3 solution, but the passivation effect of BTA saturates as the concentration reaches about 0.01 M. On the other hand, a small amount of H2O2 in H2O2/XJFW8099 slurry enhances the corrosion rate dramatically, while abundance of H2O2 in the slurry suppresses the corrosion reaction effectively. The polishing rate and its non-uniformity decrease with increasing volume ratio of H2O2 in H2O2/XJEW8099 slurry. A very smooth surface with a removal rate of 363.0 nm/min was obtained using the slurry of 1/1 ratio. Depletion of H2O2 in the slurry can result in more abrasive residuals as well as a rougher surface; the surface roughness increases from 0.3 to 9.9 nm as the H2O2/XJFW8099 ratio decreases from 1/1 to 1/4. Our results indicate that the corrosion rate, polishing rate and surface roughness of copper films are sensitively dependent on the type and concentration of oxidizer as well as the BTA additive. (C) 1997 Elsevier Science S.A.
Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
(1997-10-31)
Wang, YL
;
Liu, C
;
Feng, MS
;
Dun, JW
;
Chou, KS
The effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's modulus, relating to the polishing removal rate was proposed. In addition, a modified shallow trench isolation (STI) process with a thin nitride overcoat has been suggested to eliminate the dishing and oxide remaining on nitride issues. Furthermore, in order to minimize the residual particles and metallic contamination, a modified multi-chemical spray-cleaning process provided for the post-STI CMP cleaning was also studied. (C) 1997 Elsevier Science S.A.
Highly reliable liquid-phase deposited SiO2 with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFT's
(1998)
Yeh, CF
;
Chen, DC
;
Lu, CY
;
Liu, C
;
Lee, ST
Low temperature (similar to 300 degrees C) N2O plasma annealing for liquid-phase deposited (LPD) gate oxide has been proposed for the first time. Physicochemical and electrical characterizations show that the N2O-treated LPD-SiO2 improves breakdown field, interface state density, and Si-rich phenomenon. This novel technology has been also successfully applied to LTP poly-Si TFT's, which reveal excellent characteristics and reliability. It is believed that the N2O plasma post-treatment not only improves the oxide quality, but also passivates the trap states in poly-Si channel.
Highly reliable liquid-phase-deposited SiO2 with nitrous oxide plasma post-treatment for low-temperature-processed polysilicon thin film transistors
(2002-10-01)
Yeh, CF
;
Chen, DCH
;
Lu, CY
;
Liu, C
;
Lee, ST
Low-temperature ( similar to 300 C) N2O-plasma post-treatment for liquid-phase-deposited (LPD) gate oxide has been proposed for the first time. This treatment successfully takes the place of conventional furnace annealing in O-2 ambient. Results of physicochemical and electrical characteristics shock that N2O-plasma post-treated LPD-SiO2 has a high electrical breakdown field and low interface State density. In addition. N2O-plasma treatment also improves the Si-rich phenomenon of LPD-SiO2. From the comparison with pure N2O-plasma oxidation film, LPD-SiO2 with its short re-oxidation time in N2O plasma plays an important role in relieving interfacial stress. Finally, the novel technology is applied to the gate oxide of low-temperature-processed (LTP) polysilicon thin film transistors (poly-Si TFTs). The device performance reveals excellent electrical characteristics, and the reliability shows a satisfactory result. as well as the gate oxide reliability. It is believed that the N2O-plasma post-treatment not only improves the oxide quality, but also effectively passivates the trap states of poly-Si TFTs.
Hydrogenation of polysilicon thin-film transistor in a planar inductive H-2/Ar discharge
(1999-05-01)
Yeh, CF
;
Chen, TJ
;
Liu, C
;
Gudmundsson, JT
;
Lieberman, MA
A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFT's). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time. In addition, to promote the ionization of hydrogen, Ar gas is also introduced to H-2 plasma during hydrogenation. Furthermore, me discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H-2/Ar mixed plasma. Moreover, the posthydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFT's.
The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
(1998-01-01)
Wang, YL
;
Liu, C
;
Feng, MS
;
Tseng, WT
;
材料科學與工程學系
A novel in-situ endpoint detection method used pad temperature measurement to control the polishing tungsten and barrier metal Ti/TiN is proposed. The metal chemical-mechanical polishing (CMP) process includes chemical reaction. It is an exothermic process as the polishing slurry reacts on tungsten and Ti/TiN films. Therefore, the pad temperature increases as tungsten and barrier metal films are polished, but will drop dramatically when metal layers are polished and touch the oxide layer. A non-contact thermal sensor system was installed on our CMP tool to measure the pad temperature. From the in-situ pad temperature curve, the endpoint can be detected clearly and the polishing process stops at the oxide layer. This method can also be used to study the reactions between the pad temperature curve and the effects of CMP process conditions such as down force, platen speed as well as polishing performance such as removal rate and uniformity. (C) 1998 Elsevier Science S.A.
The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
(1998-01-01)
Wang, YL
;
Liu, C
;
Feng, MS
;
Tseng, WT
;
材料科學與工程學系
A novel in-situ endpoint detection method used pad temperature measurement to control the polishing tungsten and barrier metal Ti/TiN is proposed. The metal chemical-mechanical polishing (CMP) process includes chemical reaction. It is an exothermic process as the polishing slurry reacts on tungsten and Ti/TiN films. Therefore, the pad temperature increases as tungsten and barrier metal films are polished, but will drop dramatically when metal layers are polished and touch the oxide layer. A non-contact thermal sensor system was installed on our CMP tool to measure the pad temperature. From the in-situ pad temperature curve, the endpoint can be detected clearly and the polishing process stops at the oxide layer. This method can also be used to study the reactions between the pad temperature curve and the effects of CMP process conditions such as down force, platen speed as well as polishing performance such as removal rate and uniformity. (C) 1998 Elsevier Science S.A.