Browsing by Author "Liu, C."

Now showing 1 - 5 of 5

Ground settlement trough due to DOT shield tunneling
(2014-01-01)
Fang, Y. S.
;
Huang, M. Y.
;
Liu, C.
;
Kao, C. C.
;
交大名義發表
In this paper, the tunneling with a Double-O-Tube (DOT) shield for the construction of Taoyuan International Airport Access Mass Rapid Transit in Taiwan was introduced. The DOT shield machine and tunneling operation was summarized. Based on the field data, it was found the backfill grouting rate decreased with increasing tunnel depth. This was probably due to: at a deeper location, the pressure to close the tail void was greater, therefore high backfill grouting rate was hard to achieve. Eleven sets of field data collected from six cases indicated that, the maximum settlement due to DOT shield tunneling decreased with increasing tunnel depth. It was also found that the width of settlement trough increased with increasing tunnel depth.
Observation of Electron-Antineutrino Disappearance at Daya Bay
(2012-04-23)
An, F. P.
;
Bai, J. Z.
;
Balantekin, A. B.
;
Band, H. R.
;
Beavis, D.
The Daya Bay Reactor Neutrino Experiment has measured a nonzero value for the neutrino mixing angle 0(13) with a significance of 5.2 standard deviations. Antineutrinos from six 2.9 GW(th) reactors were detected in six antineutrino detectors deployed in two near (flux-weighted baseline 470 m and 576 m) and one far (1648 m) underground experimental halls. With a 43 000 ton-GW(th)-day live-time exposure in 55 days, 10 416 (80 376) electron-antineutrino candidates were detected at the far hall (near halls). The ratio of the observed to expected number of antineutrinos at the far hall is R = 0.940 +/- 0.011(stat.) +/- 0.004(syst.). A rate-only analysis finds sin(2)2 theta(13) = 0.092 +/- 0.016(stat.) +/- 0.005(syst.) in a three-neutrino framework.
On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack
(2018-10-27)
Lin, M. H.
;
Fan, C. C.
;
Hsu, H. H.
;
Liu, C.
;
Chen, K. M.
We investigated a short-channel ferroelectric FinFET using a ferroelectric HfZrO thin film as gate dielectrics, and scaled down the channel length to 60 nm to study the short-channel effect and the ferroelectricity. The HfZrO FinFETs exhibited improved short-channel performance including subthreshold swing improvement and reduced drain-induced barrier lowering effect. By using pulsed I-V measurement method, we confirmed that the thickness tradeoff between HfZrO ferroelectric layer and buffered layer are critical to alleviate the influence of interface traps and simultaneously obtain the ferroelectricity in HfZrO FinFET devices with the consideration of sidewall traps. Interface traps may cause unwanted off-state leakage current and mismatching negative capacitance. Here, we demonstrated that the ferroelectric behavior can be achieved by simultaneously increasing HfZrO thickness to obtain the optimized polarization and adopt appropriate buffered layer to screen the traps effect under ferroelectric domain switching. (C) 2018 The Electrochemical Society.
The detector system of the Daya Bay reactor neutrino experiment
(2016-03-01)
An, F. P.
;
Bai, J. Z.
;
Balantekin, A. B.
;
Band, H. R.
;
Beavis, D.
The Daya Bay experiment was the first to report simultaneous measurements of reactor antineutrinos at multiple baselines leading to the discovery of (nu) over bar (e) oscillations over km-baselines. Subsequent data has provided the world\'s most precise measurement of sin 2 2013 and the effective mass splitting Delta m(ee)(2). The experiment is located in Daya Bay, China where the cluster of six nuclear reactors is among the world\'s most prolific sources of electron antineutrinos. Multiple antineutrino detectors are deployed in three underground water pools at different distances from the reactor cores to search for deviations in the antineutrino rate and energy spectrum due to neutrino mixing. Instrumented with photomultiplier tubes, the water pools serve as shielding against natural radioactivity from the surrounding rock and provide efficient muon tagging. Arrays of resistive plate chambers over the top of each pool provide additional muon detection. The antineutrino detectors were specifically designed for measurements of the antineutrino flux with minimal systematic uncertainty. Relative detector efficiencies between the near and far detectors are known to better than 0.2%. With the unblinding of the final two detectors\' baselines and target masses, a complete description and comparison of the eight antineutrino detectors can now be presented. This paper describes the Daya Bay detector systems, consisting of eight antineutrino detectors in three instrumented water pools in three underground halls, and their operation through the first year of eight detector data-taking. (C) 2015 Elsevier B.V. All rights reserved.
The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor
(2018-06-01)
Fan, C. C.
;
Chiu, Y. C.
;
Liu, C.
;
Lai, W. W.
;
Cheng, C. H.
The flicker noise of source follower transistors is the dominant noise source in image sensors. This paper reports a systematic study of the shallow trench isolation effect in transistors with different sizes under high temperature conditions that correspond to the quantity of empty defect sites. The effects of shallow trench isolation sidewall defects on flicker noise characteristics are investigated. In addition, the low-frequency noise and subthreshold swing degrade simultaneously in accordance to the device gate width scaling. Both serious subthreshold leakage and considerable noise can be attributed to the high trap density near the STI edge. Consequently, we propose a coincidental relationship between the noise level and the subthreshold characteristic; its trend is identical to the experiments and simulation results.