Browsing by Author "Liu, C. M."

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A Novel InGaN Blue Light-Emitting Diode with a Self-Textured Oxide Mask Structure
(2011-01-01)
Lin, W. Y.
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Wuu, D. S.
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Huang, S. C.
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Lo, S. Y.
;
Liu, C. M.
A 460 nm InGaN/GaN blue light-emitting diode (LED) with a self-textured oxide mask (STOM) structure was fabricated and demonstrated. The design of the STOM on the GaN/sapphire substrate could be used to reduce the threading dislocation density in the epitaxial template and enhance the light extraction efficiency via the light scattering or deflection from the corrugated STOM. Under an injection current of 20 mA, the forward voltage of the STOM-LED and conventional LED (C-LED) was nearly identical at 3.41 V. Moreover, the leakage current of the STOM-LED was lower than the C-LED. Furthermore, the light output power of the STOM-LED was approximately 43% higher (at 20 mA) than the C-LED. This significant improvement was attributed to the enhanced light extraction via the STOM array.
The Inductance Enhancement Study of Spiral Inductor Using Ni-AAO Nanocomposite Core
(2009-05-01)
Hsu, M. C.
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Chao, T. Y.
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Cheng, Y. T.
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Liu, C. M.
;
Chen, C.
The letter presents the fabrication and characterization of on-chip spiral inductors with Ni-anodic alumina oxide (Ni-AAO) nanocomposite core. Ni nanorods with 70 nm diameter are deposited and isolated in an AAO matrix to form a layer of nanocomposite on silicon substrate. About 3% inductance enhancement to the inductor with the nanocomposite core has been observed and the enhancement can be kept up more than 6 GHz. Because the proposed inductance enhancement scheme using ferromagnetic-AAO-based nanocomposite as inductor core employs a CMOS-compatible fabrication process with the characteristics that can be further improved, it is our belief that the scheme has a great potential application for future radio frequency integrated circuitry (RFIC) manufacture.