Browsing by Author "Liu, Chih-Yi"

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Comparison between open partial laryngectomy with tube-free tracheostomy and total laryngectomy for hypopharyngeal cancer with cartilage invasion
(2018-10-01)
Lien, Ching-Feng
;
Wang, Chih-Chun
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Hwang, Tzer-Zen
;
Liu, Ching-Feng
;
Lin, Bor-Shyh
The present study aimed to identify a feasible treatment strategy for hypopharyngeal cancer (HPC) with non-extensive invasion of the thyroid and/or cricoid cartilage. Between June 2008 and December 2014, patients with previously untreated HPC invading cartilage who had received either open partial laryngectomy (OPL) with tube-free tracheostomy or total laryngectomy (TL) with permanent tracheostomy and an artificial larynx (pneumatic tube) were retrospectively reviewed. The patients with extensive cartilage invasion and those with inoperable or T4b disease were excluded for OPL. Outcomes and quality of life were compared between the two treatment modalities. A total of 44 patients were included. The survival rates, complications, and Dysphagia Score were compared between the two treatment modalities. The outcome of the Voice Handicap Index (P=0.032), understandability of speech (P<0.001), normalcy of diet (P=0.041), senses (P=0.006), speech (P<0.001) and social contact (P=0.004) were significantly improved in the group receiving OPL compared with the group receiving TL. Therefore, OPL with tube-free tracheostomy may be a feasible option to treat patients with HPC with non-extensive invasion of the thyroid and/or cricoid cartilage.
Current status of resistive nonvolatile memories
(2008-12-01)
Lin, Chih-Yang
;
Liu, Chih-Yi
;
Lin, Chun-Chieh
;
Tseng, T. Y.
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電子工程學系及電子研究所
Several emerging nonvolatile memories (NVMs) such as ferroelectric memory, magnetoresistive rams and ovonic universal memory are being developed for possible applications. Resistive random access memory (RRAM) is another interesting competitor in the class of NVMs. The RRAM is based on a large change in electrical resistance when the memory film is exposed to voltage or current pulses, and can keep high or low resistance states without any power. The ideal RRAM Should have the superior properties of reversible switching, long retention tune, multilevel switching, simple structure, small size, and low operating voltage. Perovskite oxides, transition metal oxides, and molecular materials were found to have resistive memory properties. This presentation reviews the ongoing research and development activities on future resistance NVMs technologies incorporating these new memory materials. The possible basic mechanisms for their bistable resistance switching are described. The effect of processing, composition, and structure on the properties of resistive memory materials and consequently the devices are discussed.
Resistance switching properties of sol-gel derived SrZrO3 based memory thin films
(2007-04-07)
Liu, Chih-Yi
;
Tseng, Tseung-Yuen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Sol-gel derived SrZrO3 based metal/insulator/metal (MIM) devices were fabricated to study their reversible resistance switching properties operated by dc voltage sweep and voltage pulses. The leakage-state of the device is changed from the original-state and finally switched between the high leakage-state (H-state) and the low leakage-state (L-state). The resistance ratio between the H-state and the L-state is about 10(4), and the leakage-states are not changed without power supply, which is suitable for nonvolatile memory application. The conduction mechanisms of the original-state, the H-state and the L-state obey Schottky emission, Frenkel-Poole emission and Ohmic conduction, respectively. The first device resistance switching, called the forming process, changed from the original-state to the H-state. The switching time from the H-state to the L-state is much longer than that from the L-state to the H-state and that of the forming process. The decay behaviours of leakage current after resistance switching are influenced by pulse width and voltage stress directions. The switching time can be accumulated to switch the device from the H-state to the L-state, which could be a guide to multi-level memory applications. The model of conducting paths can well explain the electrical behaviours of our resistance switching devices.