Browsing by Author "Liu, Chuan-Pu"

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Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning
(2016-11-01)
Wei, Kuo-Hsiu
;
Hung, Chi-Cheng
;
Wang, Yu-Sheng
;
Liu, Chuan-Pu
;
Chen, Kei-Wei
Advanced semiconductor manufacturing technology has adopted an alkaline solution for copper (Cu) corrosion prevention instead of the traditional acidic solution in the post-cleaning process of copper chemical mechanical polishing. Low particle and residue removal efficiency has been an issue for this process. In this study, we investigated the formation of small residue defects and the cleaning mechanism to remove these defects. The results show it is insufficient to remove the small residue defects by using the traditional process parameter tuning. Adding some friction between the pad and the wafer surface allowed the defects to be effectively reduced. (C) 2016 Elsevier B.V. All rights reserved.
Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning
(2016-11-01)
Wei, Kuo-Hsiu
;
Hung, Chi-Cheng
;
Wang, Yu-Sheng
;
Liu, Chuan-Pu
;
Chen, Kei-Wei
Advanced semiconductor manufacturing technology has adopted an alkaline solution for copper (Cu) corrosion prevention instead of the traditional acidic solution in the post-cleaning process of copper chemical mechanical polishing. Low particle and residue removal efficiency has been an issue for this process. In this study, we investigated the formation of small residue defects and the cleaning mechanism to remove these defects. The results show it is insufficient to remove the small residue defects by using the traditional process parameter tuning. Adding some friction between the pad and the wafer surface allowed the defects to be effectively reduced. (C) 2016 Elsevier B.V. All rights reserved.
Effect of Cu-Ion Concentration in Concentrated H(3)PO(4) Electrolyte on Cu Electrochemical Mechanical Planarization
(2010-01-01)
Kung, Te-Ming
;
Liu, Chuan-Pu
;
Chang, Shih-Chieh
;
Chen, Kei-Wei
;
Wang, Ying-Lang
The influence of Cu-ion concentration in a concentrated H(3)PO(4) electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/cm(2) when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu(OH)(2) is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/[Cu(OH)(2)+CuO] in the Cu 2p(3/2) X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3425807] All rights reserved.
Effect of Cu-Ion Concentration in Concentrated H3PO4 Electrolyte on Cu Electrochemical Mechanical Planarization
(2010-01-01)
Kung, Te-Ming
;
Liu, Chuan-Pu
;
Chang, Shih-Chieh
;
Chen, Kei-Wei
;
Wang, Ying-Lang
The influence of Cu-ion concentration in a concentrated H3PO4 electrolyte on the Cu removal rate and planarization efficiency (PE) of electrochemical mechanical planarization (ECMP) was investigated. With increasing Cu-ion concentration in the electrolyte, results show that the Cu removal rate significantly decreased because more Cu ions in the electrolyte facilitated the formation of a surface passive film. Electrochemical analysis shows that the current density decreased from 91 to 62 mA/cm(2) when the Cu-ion concentration was increased from 35.8 to 158.6 mM. In a low Cu-ion concentration electrolyte, Cu(OH)(2) is dominant, while in a high Cu-ion concentration electrolyte, CuO predominates. A high Cu-ion concentration in the electrolyte during ECMP promotes the formation of CuO, which retards Cu-ion diffusion from the Cu surface to the electrolyte solution, resulting in a decrease in the Cu removal rate. The intensity ratio of CuO/[Cu(OH)(2)+CuO] in the Cu 2p(3/2) X-ray photoelectron spectroscopy spectrum increased from 22.1 to 85.6% when the Cu-ion concentration was increased. The effect of Cu-ion concentration on the microscale PE of Cu ECMP is discussed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3425807] All rights reserved.
Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
(2012-03-01)
Chen, Sheng-Wen
;
Kung, Te-Ming
;
Liu, Chuan-Pu
;
Chang, Shih-Chieh
;
Cheng, Yi-Lung
In this study, the dependence of Cu electrochemical mechanical planarization (ECMP) rate on electric potential and mechanical force in electrolyte is investigated using potentiodynamic analysis, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). In chemical etching, CMP, electropolishing, and ECMP processes, the Cu removal rate is mainly affected by the interplay between electric potential and mechanical force. An equivalent circuit is built by fitting the EIS results to explain the behavior of Cu dissolution and Cu passive film. The Cu dissolution rate increased with decreasing charge-transfer time-delay. The resistance of the Cu passive film (R-p) is proportional to the intensity ratio of Cu2O/[Cu(OH)(2) + CuO]. (C) 2012 The Japan Society of Applied Physics
How tantalum proceeds phase change on tantalum nitride underlayer with sequential Ar plasma treatment
(2013-01-15)
Tsao, Jung-Chih
;
Liu, Chuan-Pu
;
Fang, Hsin-Chiao
;
Wang, Ying-Lang
;
光電學院
Tantalum can change its phase from high resistive beta-Ta to low resistive alpha-Ta phase on a TaN substrate with sequential Ar plasma treatment on the TaN layer surface prior to Ta deposition. The underlined mechanism of phase evolution is proposed based on systematic microstructure examination by high-resolution transmission electron microscopy. The images show that, with argon treatment, the upper part of the TaN film is transformed from amorphous-TaN to a composite phase of bcc-Ta(N) and amorphous-TaN mixture, which is also confirmed by X-ray diffraction patterns. The composite film composed of less nitrogen provides an ideal cubic matrix to confine the stable alpha-Ta phase to be grown. The alpha-Ta/bcc-Ta(N) film obtained by proper argon treatment results in film resistivity 10 times lower than the traditional Ta/TaN film. (C) 2012 Elsevier B.V. All rights reserved.
Microstructure and Formation of Copper Oxide in the Cu Electro-Polishing Process
(2010-11-01)
Kung, Te-Ming
;
Huang, Michael Rong-Shie
;
Tsao, Jung-Chih
;
Liu, Chuan-Pu
;
Wang, Ying-Lang
In this study, the formation of Cu oxide on Cu film is studied during Cu electropolishing in a phosphoric acid-based electrolyte with various Cu ion concentrations, from 2.28% to 10.08%. In cyclic voltammetry measurement, the maximum current density of the anodic peak (/(max)) decreases from 38.87 to 28.13 mA/cm(2) with increasing Cu ion concentration, indicating that an oxide film forms on the Cu film surface and the thickness increases with Cu ion concentration. Microstructures and crystallography of the oxide film are examined by transmission electron microscopy, which confirms the increase of the oxide film thickness due to the high Cu ion concentration in a H(3)PO(4) electrolyte. Three types of Cu oxide are detected using X-ray photoelectron spectroscopy, namely Cu(2)O, Cu(OH)(2), and CuO. With a Cu-ion electrolyte concentration of less than 6.99%, Cu(OH)(2) is dominant, while at higher Cu-ion concentrations, CuO predominates. The formation of CuO protects Cu from corrosion in the electrolyte with the Cu-ion concentration of over 6.99%.
Preface: the Biennial TACT International Thin Films Conference (TACT 2015)
(2016-11-01)
Huang, Jia-Hong
;
Chang, Li
;
Chu, Jinn P.
;
Huang, Bohr-Ran
;
Hsieh, Jang-Hsing
The influence of abrasive particle size in copper chemical mechanical planarization
(2013-09-01)
Wei, Kuo-Hsiu
;
Wang, Yu-Sheng
;
Liu, Chuan-Pu
;
Chen, Kei-Wei
;
Wang, Ying-Lang
There are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough. (C) 2012 Elsevier B.V. All rights reserved.