Browsing by Author "Liu, Hsin-Chou"

Now showing 1 - 5 of 5

A fabrication of germanium nanocrystal embedded in silicon-oxygen-nitride layer
(2006)
Tu, Chun-Hao
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Liu, Hsin-Chou
;
Weng, Chi-Feng
The formation of germanium nanocrystals embedded in silicon-oxygen-nitride (SiON) layer acting as distributed charge storage elements is proposed in this work. A large memory window is observed due to the isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after the high-temperature oxidation of SiGeN layer. The nonvolatile memory device with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 7 V write operation. Also, the sequent high-temperature oxidation of the SiGeN layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 The Electrochemical Society.
Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
(2006)
Tu, Chun-Hao
;
Chang, Ting- Chang
;
Liu, Po-Tsun
;
Chen, Chih-Hung
;
Yang, Che-Yu
Solid phase recrystallized polycrystalline silicon thin-film transistors (SPC poly-Si TFTs) with fluorine ion implantation were investigated in this study. Electrical characteristics and reliability of the proposed poly-Si TFTs were improved effectively, especially for field effect mobility and off current. The fluorine-ion-implanted poly-Si TFT can suppress the hot carrier multiplication near the drain side, leading to superior endurance to electrical stress compared with conventional poly-Si TFTs. It was found that fluorine ions will pile up at the poly-Si interface during thermal annealing, without the initial deposition of pad oxide. The proposed technology is manageable and compatible with conventional poly-Si TFT fabrication. As the ion dosages increase more than 5x10(15) cm(-2), however, the electrical characteristics of poly-Si TFTs were degraded due to the increase of trap state density caused by the fluorine segregation in the poly-Si film.
Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer
(2007)
Tu, Chun-Hao
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Weng, Chi-Feng
;
Liu, Hsin-Chou
The formation of germanium nanocrystals embedded in silicon-oxygen-nitride with distributed charge storage elements is proposed. A large memory window was observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after a high-temperature oxidized SiGeN layer. The Ge nanocrystals embedded in the SiON stack layer exhibited nonvolatile memory characteristics with the obvious threshold voltage shift under a bidirectional voltage sweep. Also, the manufacturing technology using the sequent high-temperature oxidation of the a-Si layer and the direct oxidation of the SiGeN layer is proposed, respectively, for the formation of a blocking oxide layer to enhance the performance of nonvolatile memory devices. The reliability characteristics, including retention time and endurance, are also advisable for the application of nonvolatile memory device. (c) 2007 The Electrochemical Society.
Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
(2006-07-31)
Tu, Chun-Hao
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Liu, Hsin-Chou
;
Tsai, Chia-Chou
The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 American Institute of Physics.
Improved memory window for Ge nanocrystals embedded in SiON layer
(2006-10-16)
Tu, Chun-Hao
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Liu, Hsin-Chou
;
Sze, Simon M.
The formation of germanium (Ge) nanocrystals embedded in silicon oxygen nitride (SiON) is proposed for charge storage elements in this work. The Ge nanocrystals can be nucleated after the oxidation process of silicon germanium nitride (SiGeN) layer at high temperatures. Compared to the control samples of Ge nanocrystals/SiO2/Si structure and SiON/Si stack memory, the proposed Ge nanocrystals/SiON/Si memory obtained superior memory window, even larger than the typical sum of both. It is considered that the extra interface trap states between Ge and SiON film were generated as Ge nanocrystals were embedded in SiON layer. (c) 2006 American Institute of Physics.