Browsing by Author "Liu, Hung-Chih"

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A Millimeter Wave Digital CMOS Baseband Transceiver for Wireless LAN Applications
(2019-01-01)
Chiu, Kang-Lun
;
Chan, Hsun-Wei
;
Lee, Wei-Che
;
Wu, Chang-Ting
;
Lopez, Henry
In this paper, we introduce a 10 Gbps digital baseband transceiver with IV supply voltage, 16-QAM, 3/4 code rate single carrier mode using 28 nm CMOS process to do the implementation. In millimeter wave communications, well-defined standard, IEEE 802.11ad is referenced for our system design and simulation. We target at modified chip rate 2.5 GHz with 4 times parallelism hardware at clock rate 625 MHz. The overall transceiver architecture design with hardware implementation considerations will be proposed. With the smart shared memory allocation, we can reduce 31% of the total amount. According to the referenced specifications, we achieve the required bit error rate 3 x 10(-7) before SNR 18.5 dB. After the system algorithm design, we implement the hardware with the core area 2.92 mm(2) with measured power 1.8 Watt for baseband transceiver chip. The performance of energ,y per bit is 0.023 nJ and 0.211 nJ per hit 6w Tx and Rx, including ADC/DAC.
Digital Self-Interference Cancellation for OFDM Full-Duplex Transmission in 60 GHz Band
(2018-01-01)
Jen, Chih-Wei
;
Yang, Hung-Wei
;
Chan, Hsun-Wei
;
Liu, Hung-Chih
;
Lopez, Henry
In this paper, we proposed an all-digital selfinterference cancellation (DSIC) with correction vector for convolution (CVC) technique to eliminate serious multipath self-interference for orthogonal frequency-division multiplexing (OFDM) full-duplex transmission in 60 GHz band. The CVC can solve the non-equivalence of circular and linear convolution. This work based on IEEE 802.15.3c/IEEE 802.11ad specification is synthesized with 40 nm 1P9M general purposes process. Under the Access Point (AP) and the User Equipment (UE) horn antennas being aligned face to face, the 9-bit fixed-point simulation result shows the proposed technique can achieve the target of the uncoded bit-error-rate (BER) of 10-2 at signal-to-noise ratio (SNR) of 24.8 dB satisfying the requirement of 26 dB.
Element Effects of Mn and Ge on the Tuning of Mechanical Properties of High-Entropy Alloys
(1970-01-01)
Tu-Ngoc Lam
;
Tsai, Che-Wei
;
Chen, Bo-Kai
;
Lai, Bo-Hong
;
Liu, Hung-Chih
Substitution of Ge for Mn increases the elastic moduli of different {h k l} orientations of the CoCrFeMnNi-based high-entropy alloy. Our findings indicate that tuning minor element compositions may result in improved strength-ductility combination. The underlying deformation mechanisms of CoCrFeNiGe(0.3)were examined byin situneutron diffraction and analysis of the associated diffraction profiles during tensile deformation. The strain-hardening response of CoCrFeNiGe(0.3)exhibited a dominant mechanism of mechanical twinning at moderate and large strains at room temperature. The evolution of the bulk work hardening rate was consistent with the convolutional multiple whole profile fitting results, which exhibited a continuous increase in twin formation probability. The microstructural development was also investigated by transmission electron microscopy, which revealed the formation of huge amounts of deformation twins in CoCrFeNiGe(0.3)at room temperature.