Browsing by Author "Liu, Jui-Nung"

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Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
(2007-05-01)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Lai, Fang-I
;
Kuo, Hao-Chung
;
Chi, Jim Y.
A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
Dynamic Characteristics and Linewidth Enhancement Factor of Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
(2009-05-01)
Peng, Peng-Chun
;
Lin, Gray
;
Kuo, Hao-Chung
;
Yeh, Chao-En
;
Liu, Jui-Nung
This study explores the relative intensity noise characteristics of quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The resonance frequency and eye diagram are presented. The linewidth enhancement factor (alpha factor) of QD VCSEL is also investigated experimentally. The values of alpha factor were measured to be between 0.48 and 0.60. Moreover, a photonic RF phase shifter is examined using the QD VCSEL. A phase shifter with a total phase shift of 2 pi was demonstrated. These investigations and demonstrations will be useful in the field of QD VCSEL.
High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers
(2007-09-01)
Lai, Fang-I.
;
Yang, H. P. D.
;
Lin, G.
;
Hsu, I. -Chen
;
Liu, Jui-Nung
A high-power, wide operation-range single-fundamental-mode InGaAs submonolayer (SML) quantum dot (QD) photonic crystal vertical-cavity surface-emitting laser (VCSEL) for fiber-optic applications was demonstrated. Single-fundamental-mode with a threshold current (I-th) of 0.9 mA and maximum continue-wave (CW) output power of 3.8 mW at 28 mA has been achieved in the 990 nm range. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range. The far field measurement shows that the beam divergence angle remains very small and almost unchanged between 6.7-6.9 degrees, with the operation range increasing from 3 to 20 mA.
P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
(2007)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Lai, Fang-, I
;
Kuo, Hao-Chung
;
Xuan, Rong
An oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom DBR, quantum wells, and top DBR, with a holey structure for light extraction. The internally reflected spontaneous emission can be extracted out of the etched hole.
Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications
(2008)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Lai, Fang-I.
;
Kuo, Hao-Chung
;
Chi, Jim Y.
Oxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.
Single-mode 780 nm multi-leaf holey vertical-cavity surface-emitting lasers
(2007-01-01)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Yeh, Zao-En
;
Lai, Fang-, I
;
Lee, Tsin-Dong
A single-mode oxide-confined VCSEL with multi-leaf holey structure for fiber-optic applications is demonstrated. Single fundamental mode output power of over 1.1 mW has been achieved in the 780 nm range.
Single-mode 780 nm vertical-cavity surface-emitting lasers with multi-leaf holey structure
(2008)
Yang, Hung-Pin D.
;
Liu, Jui-Nung
;
Yeh, Zao-En
;
Lai, Fang-I
;
Lee, Tsin-Dong
A single-mode oxide-confined vertical-cavity surface-emitting laser (VCSEL) with multi-leaf holey structure for fiber-optic applications is demonstrated. The optical con. nement was done by a multi-leaf holey structure. The deep etched leaf holes were used to provide better mode confinement and suppression of higher order modes. Single fundamental mode continuous-wave output power of over 1.1mW has been achieved in the 780nm range, with a threshold current of approximately 0.9 mA. Side-mode suppression ratio (SMSR) larger than 24 dB has been measured.