Browsing by Author "Liu, KC"

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Bayesian analysis of a general growth curve model with predictions using power transformations and AR(1) autoregressive dependence
(2000-03-01)
Lee, JC
;
Liu, KC
;
統計學研究所
;
Institute of Statistics
In this paper, we consider a Bayesian analysis of the unbalanced (general) growth curve model with AR(1) autoregressive dependence, while applying the Box-Cox power transformations. We propose exact, simple and Markov chain Monte Carlo approximate parameter estimation and prediction of future values. Numerical results are illustrated with real and simulated data.
Differential matched filter architecture for spread spectrum communication systems
(1996-08-15)
Lin, WC
;
Liu, KC
;
Wang, CK
;
電信工程研究所
;
Institute of Communications Engineering
The authors present a new digital matched filter architecture: digital differential matched filter (DDMF), that employs novel schemes to reduce the number of multiplications and accumulations (M and A). Theoretical analysis shows that the DDMF saves half of the M and A hardware in comparison with the conventional filter, and maintains identical processing gain. This makes the proposed DDMF more suitable for direct sequence spread spectrum (DSSS) communication systems and low power VLSI implementations.
Differential matched filter architecture for spread spectrum communication systems
(1996-08-15)
Lin, WC
;
Liu, KC
;
Wang, CK
;
電信工程研究所
;
Institute of Communications Engineering
The authors present a new digital matched filter architecture: digital differential matched filter (DDMF), that employs novel schemes to reduce the number of multiplications and accumulations (M and A). Theoretical analysis shows that the DDMF saves half of the M and A hardware in comparison with the conventional filter, and maintains identical processing gain. This makes the proposed DDMF more suitable for direct sequence spread spectrum (DSSS) communication systems and low power VLSI implementations.
Wet etching characterization of InSb for thermal imaging applications
(2006-03-01)
Chang, KM
;
Luo, JJ
;
Chiang, CD
;
Liu, KC
;
電子工程學系及電子研究所
A citric acid/hydrogen peroxide-based chemical system has been reported for the first time to meet the requirements of continuously scaling down the pixel area for InSb high-density infrared camera applications. This chemical system with a reaction-rate-limited mechanism was concluded to have superior etching performance compared with the nitric acid-based Solution. It is established that this etching mechanism has better control over device structure uniformity due to its linear proportionality to etching time and its nondependence oil agitation and exposed etched area. Two different chemical systems have been studied to form the high-density mesa structures ill this Study. The wet etching characteristics corresponding to these chemical Solutions were measured and analyzed. From atomic force microscopy (AFM), the results clearly indicate that the surface-reaction-rate-limited dominant-control mechanism for InSb mesa etching in citric acid/hydrogen peroxide produces a fairly smooth morphology near junction edges and well-controlled sidewall profiles. Good step coverage for dielectric deposition as shown by field-emission scanning electron microscopy and a highly uniformly distributed dark current of InSb pn junction arrays at 77 K have proven the feasibility of the citric acid/hydrogen pet-oxide wet etching process to bring superior etching performance compared with the nitric acid-based Solution.