Browsing by Author "Liu, Mei"

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Anodic aluminum oxide as a template for CNT field emitters and AAO-CNT triode structure
(2005)
Lin, Chen-Chun
;
Pan, Fu-Ming
;
Liu, Mei
;
Chang, Kai-Chun
;
Chen, Po-Lin
We have used anodic aluminum oxide (AAO) as the template to grow carbon nanotubes (CNTs) for the application of field-emission display technology. In order to obtain optimal field emission properties, we have tried to control the density and the length of the CNTs grown from AAO pore channels by tuning the growth time and the CH4 concentration of the precursor gas mixture. AAO pore channel arrays were grown in the triode structure, which was fabricated on silicon wafers by conventional integrated circuit processes.
Anodic-aluminum-oxide templated carbon nanotubes in the field emission triode
(2007)
Lin, Chen-Chun
;
Chang, Kai-Chun
;
Pan, Fu-Ming
;
Kuo, Cheng-Tzu
;
Liu, Mei
To fabricate the field-emission triode structure, carbon nanotubes (CNT) were used as field emitters and grown in the anodic aluminum oxide (AAO). AAO thin layer with vertical pore channels was first prepared on the Si (100) substrate and was used to template the following growth of CNTs in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system. The tetraethoxysilane (TEOS) oxide and At layer were deposited on the CAITs and acted as the dielectric layer and gate electrode layers for the triode structure, respectively. Reactive ion and wet etches were then used to open the field-emission area in the triode. Field-emission characteristics of the CNT emitters have been studied and an anode turn-on field of similar to 8.05 V/mu m was measured.
Nanogap fabrication on palladium electrodes for field emission display applications
(2007)
Tsai, Chih-Hao
;
Chen, Kuan-Jung
;
Pan, Fu-Ming
;
Lo, Hsiang-Yu
;
Li, Yiming
We have used focused ion beam (FIB) to produce nanogaps on palladium thin film line electrodes. The two facing cross-sections of the as-prepared nanogap were smooth and exhibited a large turn-on voltage for electron field emission depending on the separation of the gap. Hydrogen plasma treatment was used to increase the edge roughness of the nanogap, and thereby dramatically improve the field emission characteristics. For a gap with a separation of 90 nm, the turn-on voltage reduced to 50 V from 175 V after the hydrogen plasma treatment.
Nanogap formation by palladium hydrogenation for surface conduction electron emitters fabrication
(2007-04-16)
Tsai, Chih-Hao
;
Pan, Fu-Ming
;
Chen, Kuan-Jung
;
Wei, Cheng-Yang
;
Liu, Mei
Nanometer-scale gaps in Pd strips are obtained by hydrogen absorption under high pressure treatment. The resulting lattice constant increase due to the Pd phase transformation after hydrogen uptake results in a large compressive stress on the thin Pd films. Under proper geometric arrangement of the Pd electrode within a surface conduction electron (SCE) emitter structure, a single nanogap per SCE device is obtained. A turn-on voltage of 41 V is observed for emitters with a 25 nm gap. (c) 2007 American Institute of Physics.