Browsing by Author "Liu, Ming"

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Atomic-level quantized reaction of HfOx memristor
(2013-04-29)
Syu, Yong-En
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Chang, Ting-Chang
;
Lou, Jyun-Hao
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
In this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which enables the high-speed resistive switching characteristics, which was analyzed dynamically by real-time analyzing tools. From fundamental conductance considerations, the resistance of the conductive path in HfOx memristor is found to be due to barriers which are atomically incremented during the RESET process. Simultaneously, we have demonstrated the quantized switching phenomena at ultra-cryogenic temperature (4 K), which are attributed to the atomic-level reaction in metallic filament. (C) 2013 AIP Publishing LLC.
Current Uniformity Improvement in Flexible Resistive Memory
(2013)
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Chou, Kun-I
;
Liu, Ming
;
Chin, Albert
High uniform current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application.
Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells
(2015)
Luo, Qing
;
Xu, Xiaoxin
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Liu, Hongtao
;
Lv, Hangbing
;
Gong, Tiancheng
Developing high performance self-selective cell (SSC) is one of the most critical issues of the integration of 3D vertical RRAM (V-RRAM). In this work, a four-layer V-RRAM array, with high performance HfO2/mixed ionic and electronic conductor (MIEC) bilayer SSC, was demonstrated for the first time. Several salient features were achieved, including ultra-low half-select leakage (<0.1 pA), very high nonlinearity (>10(3)), low operation current (nA level), self-compliance, high endurance (>10(7)), and robust read/write disturbance immunity.
Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell Enabling Sub-5nm Scaling
(2016)
Xu, Xiaoxin
;
Luo, Qing
;
Gong, Tiancheng
;
Lv, Hangbing
;
Long, Shibing
In low cost vertical resistive switching memory (VRRAM), the inter-layer leakage becomes a serious problem, primarily resulting from the ultimate scaling in the vertical dimension. In this work, for the first time, we present a novel approach of fabricating 3D VRRAM using self-aligned self-selective RRAM to effectively address such challenge. By successfully suppressing the inter-layer leakage, the scaling limit of VRRAM could be extended beyond 5 nm. Other benefits, such as high nonlinearity (> 10(3)), low power consumption (sub-mu A), robust endurance and excellent disturbance immunity, were also demonstrated.
Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode
(2012-12-10)
Zheng, Zhi-Wei
;
Cheng, Chun-Hu
;
Chou, Kun-I
;
Liu, Ming
;
Chin, Albert
Narrow current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices. The good distribution and endurance are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. In addition, the devices on the flexible polyimide substrate exhibit excellent mechanical endurance upon repeated bending tests, showing their high potential for low-cost flexible memory application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772003]
Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance Distribution
(2013-04-01)
Chou, K. I.
;
Cheng, C. H.
;
Zheng, Z. W.
;
Liu, Ming
;
Chin, Albert
Excellent device-to-device distribution was achieved in high-performance Ni/GeOx/TiOy/TaN resistive random access memory on low-cost flexible plastics, with low 30-mu W switching power (9 mu A at 3 V; -1 mu A at -3 V), 10(5) cycling endurance, and good retention at 85 degrees C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power Reduction
(2018-01-01)
Zhou, Keji
;
Xue, Xiaoyong
;
Yang, Jianguo
;
Xu, Xiaoxin
;
Lv, Hangbing
A 28nm 16Kb nonvolatile ternary content addressable memory (nvTCAM) test chip based on logic-compatible resistive memory (ReRAM) is demonstrated with high density and low power for packet routing in network applications. The crossbar array exhibits a smallest cell size of 16.3F(2) by using 2-diode-2-ReRAM (2D2R) nvTCAM cell, useful for further 3-dimension (3D) stacking. K-means clustering is employed to allocate the storage of routing table entry for given bank count. Then the search of destination IP address can be classified and confined to a specific bank, reducing active banks for power saving. Evaluations show >3X improvement in cell density and >70% reduction in search energy with limited overhead in silicon area for bank count of four.
Ohmic contact on n-type Ge using Yb-germanide
(2012-11-26)
Zheng, Zhi-Wei
;
Ku, Teng-Chieh
;
Liu, Ming
;
Chin, Albert
;
電子工程學系及電子研究所
Poor ohmic contact by Fermi-level pinning to valence band (EV) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 degrees C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768700]
Recommended Methods to Study Resistive Switching Devices
(2019-01-01)
Lanza, Mario
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Wong, H-S Philip
;
Pop, Eric
;
Ielmini, Daniele
;
Strukov, Dimitri
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.
Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication
(2017-12-01)
Chen, Hong-Yu
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Brivio, Stefano
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Chang, Che-Chia
;
Frascaroli, Jacopo
;
Hou, Tuo-Hung
Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.