Browsing by Author "Liu, P. T."

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Effect of supercritical fluids on field emission from carbon nanotubes
(2006)
Liu, P. T.
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Tsai, C. T.
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Kin, K. T.
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Chang, P. L.
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Chen, C. M.
This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emission characteristics. In this work, CNT emitters are activated with commonly used heating process and supercritical carbon dioxide (SCCO2) fluids technology for removing adsorbed residue moisture. Experimental results have demonstrated that the electrical stability and field emission enhancement of CNT emitters are effectively achieved by the SCCO2 fluids treatment compared to the heating process, due to the minimization of residuary moisture in CNTs.
Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors
(2016-01-01)
Liu, P. T.
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Chang, C. H.
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Zheng, G. T.
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Chang, C. C.
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電子工程學系及電子研究所
We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm(2)/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.
Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide
(2007-03-26)
Yang, F. M.
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Chang, T. C.
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Liu, P. T.
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Yeh, P. H.
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Yu, Y. C.
In this letter, the Co nanocrystals using SiO(2) and HfO(2) as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.
Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
(2007-03-26)
Yang, F. M.
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Chang, T. C.
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Liu, P. T.
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Yeh, P. H.
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Yu, Y. C.
In this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.
Metal nanocrystals as charge storage nodes for nonvolatile memory devices
(2007-02-10)
Yeh, P. H.
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Chen, L. J.
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Liu, P. T.
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Wang, D. Y.
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Chang, T. C.
The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum I-GWrite/Erase/I-G Retention ratio can be obtained. (c) 2006 Elsevier Ltd. All rights reserved.
Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
(2007-05-28)
Yang, F. M.
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Chang, T. C.
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Liu, P. T.
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Chen, U. S.
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Yeh, P. H.
A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9x10(12)/cm(2), respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 10(6) write/erase cycles. (C) 2007 American Institute of Physics.
Polycrystalline Cu(In, Ga)Se-2 thin films and PV devices sputtered from a binary target without additional selenization
(2013-01-01)
Jheng, B. T.
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Liu, P. T.
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Chang, Y. P.
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Wu, M. C.
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光電工程學系
This work presents a novel method to form polycrystalline CuIn1-xGaxSe2 (CIGS) thin film by co-sputtering of In-Se and Cu-Ga alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the surface morphology, crystalline phases, physical properties, and chemical properties of the CIGS films by using material analysis methods. Experimental results indicate that CIGS thin films featured densely packed grains and chalcopyrite phase peaks of (112), (220), (204), (312), and (116). Raman spectroscopy analysis revealed chalcopyrite CIGS phase with Raman shift at 175cm(-1), while no signal at 258cm(-1) indicated the exclusion of Cu2-xSe phase. Devices built with these films exhibit efficiencies as high as 8.6%.
Source-drain barrier height engineering for suppressing the a-Si : H TFTs photo leakage current
(2007-12-03)
Wang, M. C.
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Chang, T. C.
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Liu, P. T.
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Li, Y. Y.
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Huang, F. S.
For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source-drain metal have been fabricated for this study. Several TFT structures have been fabricated to examine this characteristic. A remarkable reduction in photo leakage current has been observed under the 3300 cd/m(2) CCFL backlight illumination. The source-drain barrier height engineering has been proposed for these results. According to the energy band diagram, the barrier height for hole is estimated about 3 eV. As a result, the photo-generation holes blocked in the source-drain barrier height could effectively reduce the photo leakage current in off-state. (C) 2007 Elsevier B.V. All rights reserved.
Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
(2007-05-21)
Yang, F. M.
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Chang, T. C.
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Liu, P. T.
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Yeh, P. H.
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Chen, U. S.
The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals. (c) 2007 American Institute of Physics.