Browsing by Author "Liu, Pin-Lin"

Now showing 1 - 3 of 3

A Robust Data Retention Characteristic of Sol-Gel-Derived Nanocrystal Memory by Hot-Hole Trapping
(2010-07-01)
Wu, Chi-Chang
;
Ko, Fu-Hsiang
;
Yang, Wen-Luh
;
You, Hsin-Chiang
;
Liu, Fu-Ken
A new sol-gel-derived Ti(x)Zr(y)Si(z)O nanocrystal (NC) memory with a high-performance data retention characteristic is demonstrated by the hot-hole-trapping method. Prior to rapid thermal annealing, the high-density NC layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride. The electrical properties of the sol-gel-derived NC memory are demonstrated in terms of memory window, charge retention, program speed, and endurance. The memory window of the NC memory from the novel hot-hole-trapping mechanism can be achieved up to 4.18 +/- 0.21 V, and long retention times obtained from extrapolation up to 10(6) s are observed as 8%, 13%, and 21% window narrowing under respective temperatures of 25 degrees C, 85 degrees C, and 125 degrees C. The good electrical performance is attributed to the contribution of the high density of isolated NCs and hole-trapped into the deep-trap energy level, so no significant lateral and vertical charge leakage occurs.
Facile sol-gel preparation of nanocrystal embedded thin film material for memory device
(2013-01-01)
Wu, Chi-Chang
;
Tsai, Yi-Jen
;
Liu, Pin-Lin
;
Yang, Wen-Luh
;
Ko, Fu-Hsiang
A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 degrees C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for <5 and <10 % charge loss at applied temperature of 25 and 85 degrees C, respectively. The ethanol system CTFM demonstrates a large memory window (similar to 10 V) and good reliability than 2-propanol (similar to 3 V) due to the existence of several isolated crystals in silicon dioxide film.
Nanocrystallization and interfacial tension of sol-gel derived memory
(2008-03-24)
Wu, Chi-Chang
;
Tsai, Yi-Jen
;
Chu, Min-Ching
;
Yang, Shao-Ming
;
Ko, Fu-Hsiang
The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 degrees C annealing, and finally transferred into NCs at 900 degrees C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 degrees C annealing was varied and had higher interfacial energy. The crystallized process at 900 degrees C annealing could minimize the energy. The retention for 900 degrees C annealed sample exhibited less than 30% charge loss after 10(6) s at 125 degrees C measurement. (c) 2008 American Institute of Physics.