Browsing by Author "Liu, Po Tsun"

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Forming tapered pattern by Cu electrodeposition through mask on Ni seed layer for thin-film transistors
(2006-11-01)
Jenq, Shrine Ning
;
Wan, Chi Chao
;
Wang, Yung Yun
;
Li, Hung Wei
;
Liu, Po Tsun
The fabrication of Cu gates for thin-film transistors (TFTs) by electrodeposition through mask on a Ni layer has been developed. After pretreatment in acid sulfate solution, a Cu deposit acquires the property of good adhesion on a Ni layer. Organic additives [e.g., poly(ethylene glycol) (PEG), bis(3-sodiumsulfopropyl) disulfide (SPS)] were used to create the desired tapered shape of the deposited Cu pattern on a Ni layer. Furthermore, a multilayer Cu gate for TFTs was fabricated after the selective etching of the nickel layer. The new method provides an alternative wet process for fabricating Cu gates for TFTs.
Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture
(2018-05-25)
Liu, Po Tsun
;
Ruan, Dun Bao
;
Yeh, Xiu Yun
;
Chiu, Yu Chuan
;
Zheng, Guang Ting
A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (similar to 10(5)) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.
Tapered Cu pattern metallization by electrodeposition through mask
(2006)
Jenq, Shrane Ning
;
Wan, Chi Chao
;
Wang, Yung Yun
;
Li, Hung Wei
;
Liu, Po Tsun
A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step. (c) 2006 The Electrochemical Society.