Browsing by Author "Liu, R"

Now showing 1 - 3 of 3

Cross-reference maximum likelihood reconstruction for positron emission tomography with empiric studies
(2001-08-01)
Chen, J
;
Tu, K
;
Chen, T
;
Lu, H
;
Liu, R
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
(2004-01-30)
Chang, TC
;
Yan, ST
;
Liu, R
;
Lin, ZW
;
Aoki, H
In this paper, electrical characterization of low-k dielectric methyl-silsesquiazane (MSZ) is presented. Thermal stress and bias temperature stress (BTS) were utilized to evaluate the impact of Cu penetration on dielectric properties. In the investigation of thermal stress performed by furnace annealing, the leakage mechanism of Al- and Cu-gate MIS capacitors is competed by the decrease of the interfacial states between metal and dielectric and the increase of defects resulted from Cu penetration. Also, the leakage conduction mechanism at high electric field is deduced from Schottky emission in conjunction with space-charge-limited current conduction (SCLC) through BTS methods. (C) 2003 Elsevier B.V. All rights reserved.
Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memory
(2005-06-01)
Tsai, CW
;
Lai, SC
;
Yen, CT
;
Lien, HM
;
Lung, HL
Slow-switching effect in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The slow-switching effect becomes worse at lower operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly for low-voltage and high-speed applications. This slow-switching effect is believed to be attributed to slowing down of polarization switching caused by band bending from Schottky built-in potential at the electrode/ferroelectric interface. The proposed mechanism is supported by the polarity dependence in an asymmetric LNO/PZT/Pt sample.