Browsing by Author "Liu, T. W."

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Correlated Electric Fluctuations in GaN Nanowire Devices
(2009-02-01)
Li, L. C.
;
Huang, S. Y.
;
Wei, J. A.
;
Suen, Y. W.
;
Lee, M. W.
We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.
Temperature dependence of the excess noise of a GaN nanowire device
(2007)
Li, L. C.
;
Huang, S. Y.
;
Wei, J. A.
;
Suen, Y. W.
;
Lee, M. W.
We report on the study of the low-frequency excess noise of a GaN nanowire (NW) device from room temperature to 135 K. A Lorentzian noise is found to be embedded in the 1/f noise background, and becomes more significant as the bias current increases or the temperature decreases. The temperature dependance of the associated characteristic time, extracted from the spectrum, shows two thermally activated regions with different activation energies, which originate from different carrier-trapping levels in the NW device. The temperature dependence of the 1/f noise is difficult to unveil due to the presence of the strong Lorentzian noise.