Browsing by Author "Liu, UC"

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Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias
(2000)
Chiang, LP
;
Tsai, CW
;
Wang, T
;
Liu, UC
;
Wang, MC
Enhanced hot carrier degradation is observed in DTMOS-like operation mode. This phenomenon is attributed to Auger recombination assisted hot electron process. Measured hot electron gate current and light emission spectrum in nMOSFETs provide evidence that the high-energy tail of channel electrons is increased by the application of a positive substrate bias. As opposed to conventional hot carrier degradation, the Auger enhanced degradation exhibits positive temperature dependence and is more significant at low drain bias.