Browsing by Author "Liu, Wen-Yen"

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A 256x128 energy-efficient TCAM with novel low power schemes
(2007)
Huang, Po-Tsang
;
Chang, Shu-Wei
;
Liu, Wen-Yen
;
Hwang, Wei
;
電子工程學系及電子研究所
Novel low power schemes for energy-efficient ternary content-addressable memory (TCAM) are presented in this paper. The butterfly match-line scheme is based on the pseudo-footless clock-data pre-charged architecture. It connects each pipelined stage in a butterfly style which significantly decreases both search time and power consumption. For applications like IP-address forwarding in a network router, a new don't-care based power gating and don't-care based hierarchical (DCBH) search-line scheme are proposed. The search-line is divided into global search-line (GSL) and local search-line (LSL) which is controlled by don't-care state in DCBH search-line scheme. Therefore, the power consumption on search line is reduced without any search time overhead. Besides, the power saving of the standby power is achieved by power gating technique. The proposed 256 x 128bit TCAM has been implemented with TSMC 0.13um CMOS technology. It shows 0.55ns of match evaluation time on search operation with 0.29 fJ/bit/search of energy efficiency.
"Green" micro-architecture and circuit co-design for ternary content addressable memory
(2008)
Huang, Po-Tsang
;
Chang, Shu-Wei
;
Liu, Wen-Yen
;
Hwang, Wei
;
電子工程學系及電子研究所
In this paper, an energy-efficient and high performance ternary content addressable memory (TCAM) are presented. It employs the concept of "green" micro-architecture and circuit co-design. For achieving energy-efficient TCAM architecture, hierarchy search-line scheme and butterfly match-line scheme are proposed. Moreover, the match-tines are also implemented by noise-tolerant XOR-based conditional keeper and don't-care based power gating scheme to reduce not only search time but power consumption. In order to reduce increasing leakage power with advanced technologies, furthermore, the proposed TCAM design employs super cut-off power gating technique and multi-mode data-retention power gating technique to reduce leakage currents without reducing search time and destroying noise margin. An energy-efficient 256x144 TCAM array is implemented in TSMC 0.13um and designed in 65nm Berkeley Predictive Technology Model, respectively. The simulation results show the leakage power reduction is 70.7% and energy metric of TCAM macro is 0.047 fJ/bit/search.
Leakage current cut-off device for ternary content addressable memory
(2009-06-25)
Huang, Po-Tsang
;
Liu, Wen-Yen
;
Hwang, Wei
A leakage current cut-off device for a ternary content addressable memory is provided. The storage cell of a ternary content addressable memory may be in the active mode, data-retention mode and cut-off mode. This invention applies a multi-mode data retention power gating device to the storage cell of the ternary content addressable memory to reduce the leakage current through the storage cell in the data-retention mode and the cut-off mode, and support the full speed operation in the active mode.
Super leakage current cut-off device for ternary content addressable memory
(2009-06-25)
Huang, Po-Tsang
;
Liu, Wen-Yen
;
Hwang, Wei
A super leakage current cut-off device for a ternary content addressable memory (TCAM) is provided. For various operations of the TCAM, the device uses the high-end and low-end power gating control transistors to turn on/off the don't-care cells to reduce the leakage current passing through the don't-care cells.