Browsing by Author "Liu, YR"

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A new insight into the degradation mechanisms of various mobility-enhanced CMOS devices with different substrate engineering
(2005)
Chung, SS
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Liu, YR
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Wu, SJ
;
Lai, CS
;
Liu, YC
In this paper, the difference in degradation mechanism for different substrate engineered CMOS devices has been reported for the first time. These two different substrate engineering includes hybrid substrate engineering, with (100) and (110) orientations, and strained-Si devices. Different mechanisms are responsible for these two different mobility enhancement schemes. For strained-Si devices, it shows that the dominant mechanism for HC(Hot Carrier) and NBT (Negative Bias Temperature) degradations is attributed to the lateral electric field resulting from the mobility enhancement. While for (110)/(100) substrate engineered devices, the dominant mechanism is due to the dangling bond of the surface. In other words, for (I I 0)/(l 00) substrate, the device degradation is weakly dependent on the mobility enhancement while largely dependent on the bond strength. Finally, the difference in temperature dependence of HC and NBT has also been observed for both strained-Si and (110)/(100) substrate devices. Sophisticated measurement techniques, charge pumping (CP) and gated-diode (GD) measurement, have been employed to understand these device mechanisms. These results provide a guideline for the device design and the understanding of related reliabilities in the popular strained-Si and hybrid substrate technology CMOS devices.
A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices
(2005)
Chung, SS
;
Liu, YR
;
Yeh, CF
;
Wu, SR
;
Lai, CS
In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.
Mixing water treatment residual with excavation waste soil in brick and artificial aggregate making
(2005-02-01)
Huang, CP
;
Pan, JRS
;
Liu, YR
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環境工程研究所
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Institute of Environmental Engineering
A large quantity of water treatment residual is generated each year from fresh water treatment plants in Taiwan. Landfill disposal of the nonhazardous sludge is impractical because of the high cost of transportation and an increasing scarcity of landfill sites in Taiwan. The water treatment residual was characterized; the ceramic bodies were prepared and sintered to formulate into building bricks and artificial aggregates. The sintering temperature requirement by the water treatment residual was higher than normally practiced in brick works due to the higher Al2O3 and lower SiO2 content. The excavation waste soil, practically clay, was blended with water treatment residual to improve the brick quality. Under the commonly practiced brick-making condition, up to 15% of water treatment residual could be added to produce first grade brick specified by the National Science Council (NSC). Test results of specific gravity, water absorption, and compressive strength of the artificial aggregates confirmed its applicability in constructions as various degrees of light-weight aggregates.