Browsing by Author "Liu, Yu-Sian"

Now showing 1 - 3 of 3

A Monolithic CMOS/MEMS Accelerometer with Zero-g Calibration Readout Circuit
(2013-01-01)
Liu, Yu-Sian
;
Huang, Chien-Jo
;
Kuo, Fu-Yen
;
Wen, Kuei-Ann
;
Fan, Long-Sheng
A monolithic accelerometer design with zero-g calibration with TSMC 0.18 mu m mixed-signal 1P6M process is presented. On-chip digital offset calibration enables compensation of random mechanical offset in the sensor due to process variation. The maximum 21 fF capacitance mismatch can be calibrated. The simulation results show that the whole system have 452.1 mV/g sensitivity. The power consumption is about 1.16 mW. The output noise is 26.85 mu g/v Hz at 1KHz.
Implementation of a CMOS/MEMS Accelerometer with ASIC Processes
(2019-01-01)
Liu, Yu-Sian
;
Wen, Kuei-Ann
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper presents the design, simulation and mechanical characterization of a newly proposed complementary metal-oxide semiconductor (CMOS)/micro-electromechanical system (MEMS) accelerometer. The monolithic CMOS/MEMS accelerometer was fabricated using the 0.18 m application-specific integrated circuit (ASIC)-compatible CMOS/MEMS process. An approximate analytical model for the spring design is presented. The experiments showed that the resonant frequency of the proposed tri-axis accelerometer was around 5.35 kHz for out-plane vibration. The tri-axis accelerometer had an area of 1096 m x 1256 m.
Monolithic Low Noise and Low Zero-g Offset CMOS/MEMS Accelerometer Readout Scheme
(2018-12-01)
Liu, Yu-Sian
;
Wen, Kuei-Ann
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A monolithic low noise and low zero-g offset CMOS/MEMS accelerometer and readout scheme in standard 0.18 m CMOS mixed signal UMC process is presented. The low noise chopper architecture and telescopic topology is developed to achieve low noise. The experiments show noise floor is 421.70 g/Hz. The whole system has 470 mV/g sensitivity. The power consumption is about 1.67 mW. The zero-g trimming circuit reduces the offset from 1242.63 mg to 2.30 mg.