Browsing by Author "Liu, Yuan-An"

Now showing 1 - 2 of 2

Growth of a-plane ZnO thin films on LaAlO3(100) substrate by metal-organic chemical vapor deposition
(2008-02-15)
Tian, Jr-Sheng
;
Liang, Mel-Hui
;
Ho, Yen-Teng
;
Liu, Yuan-An
;
Chang, Li
ZnO(1 1 (2) over bar 0) thin films were successfully grown on LaAlO3 (lanthanum aluminate) (10 0) substrate by atmospheric pressure metalorganic chemical vapor deposition. X-ray diffraction, atomic force microscopy, and scanning electron microscopy showed that ZnO films formed at 450 degrees C were composed of almost all (1 1 (2) over bar 0) oriented grains while (0 0 0 2) oriented ZnO grains started to appear at temperature above 550 degrees C. The a-plane ZnO films consisted of two types of domains with their c-axis perpendicular to each other due to LaAlO3(1 0 0) symmetry with low lattice mismatch along < 1 1 0 >. (C) 2007 Elsevier B.V. All rights reserved.
The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition
(2012-10-08)
Peng, Chun-Yen
;
Liu, Yuan-An
;
Wang, Wei-Lin
;
Tian, Jr-Sheng
;
Chang, Li
Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 degrees C is reported. A high cooling rate (similar to 100 degrees C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759032]