Browsing by Author "Liu, Yunya"

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Giant Enhancement of Ferroelectric Retention in BiFeO3 Mixed-Phase Boundary
(2014-09-24)
Huang, Yen-Chin
;
Liu, Yunya
;
Lin, Yi-Tsu
;
Liu, Heng-Jui
;
He, Qing
A large enhancement of nanodomain retentionis shown in the mixed-phase region of a strained BiFeO3 epitaxial film. The superior ferroelectric retention is attributed to a lower elastic-energy density at the phase boundaries, which act as periodic pinning centers for the domain wall motion. This study delivers a new pathway of incorporating an elastic-energy term to assist ferroelectric retention.
Nanoscale Control of Phase Variants in Strain-Engineered BiFeO(3)
(2011-08-01)
Vasudevan, Rama K.
;
Liu, Yunya
;
Li, Jiangyu
;
Liang, Wen-I
;
Kumar, Amit
Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO(3) (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T -> R transition is activated at lower voltages compared to T -> - T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.
Nanoscale Control of Phase Variants in Strain-Engineered BiFeO3
(2011-08-01)
Vasudevan, Rama K.
;
Liu, Yunya
;
Li, Jiangyu
;
Liang, Wen-I
;
Kumar, Amit
Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO3 (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T -> R transition is activated at lower voltages compared to T -> - T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.