Browsing by Author "Lo, CY"

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CoSix thermal stability on narrow-width polysilicon resistors
(2006-01-01)
Chen, YM
;
Tu, GC
;
Wang, YL
;
Hwang, GJ
;
Lo, CY
In this study, the thermal stability of polysilicon lines with various widths and different dopant types in 90-nm processes is investigated. The thermal behavior of silicides formed on N+ polyresistors and P+ polyresistors is very different. The worst thermal stability is found on the narrower N+ polyresistors, while an abnormal thermal behavior is observed on P+ polyresistors. This anomalous thermal-stability change with different drawn linewidths of P+ polyresistors is related to the C Grain-size distribution and the actual polyresistor linewidth. Also, it is interesting to find that the voids formed in P+ polyresistors lead to a stepped increase in sheet resistance. (c) 2006 American Vactatin Society.
Reverse CoSi(2) thermal stability and digitized sheet resistance increase of sub-90 nm polysilicon lines
(2005-04-01)
Lo, CY
;
Peng, YC
;
Chen, YM
;
Tu, GC
;
Lin, SS
An equation for quantifying the CoSi(2) thermal stability of polysilicon lines ranging from 50 nm to 2 mu m is proposed for the first time. In contrast to the intuitive thinking of narrower lines having a worse thermal stability, the equation predicts the weakest thermal stability occurring at the super nominal line in 90nm technology. An interesting phenomenon of digitized resistance increase is also reported for the first time.