Browsing by Author "Lo, Chi-Kuen"

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Effect of oxygen concentration on characteristics of NiOx-based resistance random access memory
(2007-02-01)
Lee, Ming-Daou
;
Ho, Chia-Hua
;
Lo, Chi-Kuen
;
Peng, Tai-Yen
;
Yao, Yeong-Der
The resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.
Ferromagnetic resonance properties of Fe81-xNixGa19/Si(1 0 0) and Fe81-yNiyGa19/glass films
(2013-06-15)
Liu, Chi-Ching
;
Jen, Shien-Uang
;
Juang, Jenh-Yih
;
Lo, Chi-Kuen
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電子物理學系
Two series of Fe81 xNixGa19/Si(100) and Fe81 yNiyGa19/glass films, where x or y = 0-26, were made by the magnetron sputtering method. The film thickness (t(f)) was fixed at 100 nm. We have performed three kinds of experiments on these films: (i) the saturation magnetostriction (lambda(S)) measurement; (ii) the easy-axis and hard-axis magnetic hysteresis loop measurements; and (iii) the ferromagnetic resonance (FMR) experiment to find the resonance field (H-R) with an X-band cavity tuned at f(R) = 9.6 GHz. The natural resonance frequency, f(FMR), of the Kittel mode at zero external field (H = 0) is defined as f(FMR) (sic) nu[H(K)4-pi M-S](1/2), where gamma = 2 pi nu is the gyromagnetic ratio, H-K and 4 pi M-S are the uniaxial anisotropy field and saturation magnetization, and H-K << 4 pi M-S. The Gilbert damping constant, alpha, is calculated from the formula, alpha = [nu(Delta H)(S)]/(2f(R)), where (Delta H)(exp) = (Delta H)(S) + (Delta H)(A), (Delta H)(exp) is the half-width of the absorption peak around the resonance field H-R, (Delta H)(S) is the symmetric part of (Delta H)(exp), and (Delta H)(A) is the asymmetric part. The degree of asymmetry, (Delta H)(A)/(Delta H)(exp), is associated with the structural and/or magnetic inhomogeneities in the film. The main findings of this study are as follows: (A) f(FMR) tends to decrease, as x or y increases; (B) alpha decreases from 0.052 to 0.020 and then increases from 0.020 to 0.050, as x increases, and a decreases from 0.060 to 0.013 in general, as y increases; and (C) lambda(S) reaches a local maximum when x = 22. We conclude that the Fe59Ni22Ga19/glass film should be the most suitable for application in magneto-electric microwave devices. (C) 2013 Elsevier B.V. All rights reserved.
Magnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layer
(2009-02-01)
Chien, Wei-Chih
;
Yao, Yeong-Der
;
Wu, Jiann-Kuo
;
Lo, Chi-Kuen
;
Hung, Ruei-Feng
Magnetoimpedance behaviors and thermal effects of a Co/Cu/Co/Py pseudo-spin-valve (PSV) with a nano-oxide layer (NOL) were studied. The PSV can be regarded as a combination of resistances, inductances, and capacitances. In addition, equivalent circuit theory can be used to analyze the ac behavior of this system. The imaginary part of the magnetoimpedance (magnetoreactance) ratio is more than 1700% at the resonance frequency (f(r))=476 kHz at room temperature (R(T)). The dc magnetoresistance (MR) ratio decreases as the annealing temperature increases because the NOL is formed at the interface between the spacer and the magnetic layer. The NOL deteriorates the differential spin scattering and reduces the dc MR ratio. Impedance spectroscopy was utilized to analyze the capacitance effect from NOL after annealing. The effective capacitance of the PSV was 21.8 nF at R(T) and changed to 11.8 nF after annealing at 200 degrees C. The useful equivalent capacitor circuit not only is a nondestructive measurement technology but can also explain the experimental results and prove the formation of the NOL.