Browsing by Author "Lo, Hung-Ping"

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Investigation of Random Telegraph Signal with PD SOI MOSFETs
(2012)
Chen, Ching-En
;
Chang, Ting-Chang
;
Lo, Hung-Ping
;
Ho, Szu-Han
;
Lo, Wen-Hung
A novel method, called random telegraphy signal (RTS), was constructed to characterize the gate oxide quality and reliability of metal-oxide-semiconductor field-effect-transistors (MOSFETs). With the aggressive scaling of device size, drain current RTS (I-D-RTS) become a critical role in carrier transport of MOSFETs. Besides, RTS in gate leakage current (I-G-RTS) was denoted as the other new method to understand property of gate oxide. Recently, the study of RTS has also been made in MOSFETs with metal gate and high dielectric constant (metal gate/high-k). However, the RTS in partial depleted silicon-on-insulator MOSFETs (PD SOI MOSFETs) has not comprehensively been studied yet. This paper investigates RTS characteristics in PD SOI MOSFETs.
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
(2011-09-01)
Huang, Sheng-Yao
;
Chang, Ting-Chang
;
Chen, Min-Chen
;
Chen, Shih-Ching
;
Lo, Hung-Ping
This study investigates a sputtered Sm(2)O(3) thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
(2011-09-01)
Huang, Sheng-Yao
;
Chang, Ting-Chang
;
Chen, Min-Chen
;
Chen, Shih-Ching
;
Lo, Hung-Ping
This study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.