Browsing by Author "Lo, Tai-Lin"

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0.35-mu m SiGe BiCMOS Weaver Image Rejection Receiver with 60-GHz Double-Quadrature Sub-harmonic Schottky Diode Mixer and 10-GHz Double Quadrature Gilbert Mixer
(2017-01-01)
Wang, Kuo-An
;
Meng, ChinChun
;
Lo, Tai-Lin
;
Huang, Guo-Wei
;
電機工程學系
A Weaver image rejection receiver using 60-GHz double-quadrature sub-harmonic Schottky diode mixer is demonstrated using 0.35-pm SiGe BiCMOS technology. A miniature RF quadrature generator is realized to generate 60-GHz quadrature RE signals. A Weaver image rejection architecture is applied in this paper to filter out the image signals. A triple-balanced sub-harmonic Schottky diode mixer with a trifilar transformer is adopted to the first down conversion stage to obtain good LO1-RF and 2LO(1)-RE isolations while the down-converted IF1 signals are converted to the base band I/Q signals with a double-quadrature Gilbert mixer at the second down conversion stage. As a result, a 60-GHz Weaver image rejection receiver with a 2-GHz channel bandwidth is achieved with IP1dB of 2 dBm and HP3 of 14 dBm.
60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m Foundry CMOS Technology
(2012-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wang, Ta-Wei
;
Lo, Tai-Lin
;
Wang, Chia-Ling
Due to the benefits of Schottky diodes, 0.18-mu m CMOS technology is being promoted for millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters using Schottky diodes are realized by using 0.18-mu m foundry CMOS technology. A CoSi2-Si Schottky diode, fabricated on a lower doped N-well by blocking the threshold voltage adjustment implant, has a lower reverse leakage current and a better ideality factor. Thus, it is ideal for the 60-GHz sub-harmonic mixer design. Two new types of Schottky-diode mixers, a down-conversion sub-harmonic mixer with a dual-band lump-distributed phase-inverter rat-race coupler and an up-conversion sub-harmonic mixer with a trifilar transformer, are realized and employed at the high-frequency conversion stage of the dual-conversion architecture to achieve small size and broadband isolations. The silicon-based Schottky diode with a low turn-on voltage offers great advantage in LO pumping power, especially for an antiparallel diode pair structure. In our Schottky-diode sub-harmonic mixers, the required LO power is only 1 dBm. The dual-conversion down-converter achieves 5-dB conversion gain and 19 dB noise figure under V-dd = 2.5 V and I-dd = 22 mA, and the dual-conversion up-converter, with V-dd = 2.5 V and I-dd = 26 mA, attains greater than 40-dB sideband rejection and -1 dB conversion gain over the whole 60-GHz bandwidth.
V-Band Dual-Conversion Down-Converter with Schottky-Diode Ring-Mixer Using 0.35 mu m SiGe BiCMOS Process
(2015)
Kao, Jen-Chieh
;
Meng, Chinchun
;
Lo, Tai-Lin
;
Huang, Guo-Wei
;
電機學院
A V-band dual-conversion downconverter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz low-noise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a low-noise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.