Browsing by Author "Lossy, R."

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Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
(2010-07-01)
Lu, C. Y.
;
Bahat-Treidel, E.
;
Hilt, O.
;
Lossy, R.
;
Chaturvedi, N.
In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate-drain spacing, source-gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices.