Browsing by Author "Lou, Jyun-Hao"

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Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
(2012-03-01)
Syu, Yong-En
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Geng-Wei
;
Chang, Kuan-Chang
Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.
Atomic-level quantized reaction of HfOx memristor
(2013-04-29)
Syu, Yong-En
;
Chang, Ting-Chang
;
Lou, Jyun-Hao
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
In this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which enables the high-speed resistive switching characteristics, which was analyzed dynamically by real-time analyzing tools. From fundamental conductance considerations, the resistance of the conductive path in HfOx memristor is found to be due to barriers which are atomically incremented during the RESET process. Simultaneously, we have demonstrated the quantized switching phenomena at ultra-cryogenic temperature (4 K), which are attributed to the atomic-level reaction in metallic filament. (C) 2013 AIP Publishing LLC.
Charge Quantity Influence on Resistance Switching Characteristic During Forming Process
(2013-04-01)
Chu, Tian-Jian
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Wu, Hsing-Hua
;
Chen, Jung-Hui
In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.