Browsing by Author "Lu, CW"

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A fast and sensitive built-in current sensor for IDDQ testing
(1996)
Lu, CW
;
Lee, CL
;
Chen, JE
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電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A high speed circuit scheme for driving field emission array
(1996)
Lu, CW
;
Lee, CL
;
Huang, JM
;
交大名義發表
;
電子工程學系及電子研究所
The field emission array (FEA), when used as a display device, requires a scanning driving circuit. Due to the large FEA capacitance (typically 5 pF for one pixel), the driving circuit is usually slow. In this work, a new driving circuit, which employs the voltage controlled current source (VCCS), overcomes the above-mentioned problem, thus can reach a high driving speed. In addition, the circuit has the advantages of a uniform current driving, the gray level control and the low power consumption.
A low-power high-speed class-AB buffer amplifter for flat-panel-display application
(2002-04-01)
Lu, CW
;
Lee, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A low-power, high-speed, but with a large input dynamic range and output swing class-AB output buffer circuit, which is suitable for the flat-panel display application, is proposed. The circuit employs an elegant comparator to sense the transients of the input to turn on charging/discharging transistors, thus draws little current during static, but has an improved driving capability during transients. It is demonstrated in a 0.6 mum CMOS technology.
A new IDDQ testing scheme employing charge storage BICS circuit for deep submicron CMOS ULSI
(1998)
Lu, CW
;
Lee, CL
;
Chen, JE
;
Su, CC
;
電子工程學系及電子研究所
In this work, a new IDDQ methodology, which is very suitable for testing deep submicron digital ULSI CMOS ICs, is proposed and demonstrated. It incorporates three new BICSs and has advantages of reduction in the circuit partitioning number, low input voltage, high resolution, low power supply voltage, and improved fault detectability and diagnosability.
A physical simulation model for field emission triode
(1998-10-01)
Lu, CW
;
Lee, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A simple but accurate physical model, which can be incorporated into circuit simulation programs such as SPICE for the field emission triode (FET), is developed. The model is based on the Fowler-Nordheim (F-N) current density-electric field (J-E) relationship. An electric field form is adopted to calculate the current density distribution along the surface of the sphere-shape tip. The cathode current is obtained by integration of the current density over the emission surface. The gate current is derived by the same integration, but over part of the emission area. A procedure to extract the values for the parameters of the model is also given. The model and the procedure has been applied to experimental devices to demonstrate its accuracy.
A physical simulation model for field emission triode
(1998-10-01)
Lu, CW
;
Lee, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A simple but accurate physical model, which can be incorporated into circuit simulation programs such as SPICE for the field emission triode (FET), is developed. The model is based on the Fowler-Nordheim (F-N) current density-electric field (J-E) relationship. An electric field form is adopted to calculate the current density distribution along the surface of the sphere-shape tip. The cathode current is obtained by integration of the current density over the emission surface. The gate current is derived by the same integration, but over part of the emission area. A procedure to extract the values for the parameters of the model is also given. The model and the procedure has been applied to experimental devices to demonstrate its accuracy.
A SPICE simulation model for field emission triode
(1996)
Lu, CW
;
Lee, CL
;
Huang, JM
;
交大名義發表
;
電子工程學系及電子研究所
In this work, a simple but accurate circuit model, which can be incorporated into circuit simulation programs such as SPICE, for field emission triode (FET) is developed. The model is based on the Fowler-Nordheim (F-N) J-E relationship but takes into account the charge distribution on the surface of the tip of the device. A procedure is also developed to extract the parameters of the model.
Analysis of application of the IDDQ technique to the deep sub-micron VLSI testing
(2002-02-01)
Lu, CW
;
Lee, CL
;
Su, CC
;
Chen, JE
;
電子工程學系及電子研究所
In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a statistical approach according to the International Technology Roadmap for Semiconductors 1999 Edition considering process variations and different input vectors. The estimated results show that the standard deviation of the IDDQ current is proportional to the square root of the circuit size and the IDDQ currents of the defect-free and the defective devices, which are of the size up to 1 x 10(7) gates, are still differentiable under the condition of random process deviations and input vectors. Two new IDDQ testing schemes, which detect the defective current based on the two separate IDDQ distributions, are proposed. From the study, it is concluded that IDDQ testing is still applicable for the deep sub-micron VLSI for the next ten years.
Direct current circuit simulation model for a field emission triode
(1998-09-01)
Lu, CW
;
Lee, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A simple empirical circuit model, which can be incorporated into circuit simulation programs such as SPICE, for a field emission triode is developed. The model is based on the Fowler-Nordheim (FN) J-E relationship but takes into account the space charge effect and the exponential-like charge distribution on the surface of the tip of the device. A procedure is also developed to extract the parameters of the model. (C) 1998 American Vacuum Society.
Experimental and theoretical investigations of rate coefficients of the reaction S(P-3)+O-2 in the temperature range 298-878 K
(2004-11-01)
Lu, CW
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Wu, YJ
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Lee, YP
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Zhu, RS
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Lin, MC
Rate coefficients of the reaction S+O-2 with Ar under 50 Torr in the temperature range 298-878 K were determined with the laser photolysis technique. S atoms were generated by photolysis of OCS with a KrF excimer laser at 248 nm; their concentration was monitored via resonance fluorescence excited by atomic emission of S produced from microwave-discharged SO2. Our measurements show that k(298 K)=(1.92+/-0.29)x10(-12) cm(3) molecule(-1) s(-1), in satisfactory agreement with previous reports. New data determined for 505-878 K show non-Arrhenius behavior; combining our results with data reported at high temperatures, we derive an expression k(T)=(9.02+/-0.27)x10(-19)T(2.11+/-0.15) exp[(730+/-120)/T] cm(3) molecule(-1) s(-1) for 298less than or equal toTless than or equal to3460 K. Theoretical calculations at the G2M (RCC2) level, using geometries optimized with the B3LYP/6-311+G(3df) method, yield energies of transition states and products relative to those of the reactants. Rate coefficients predicted with multichannel RRKM calculations agree satisfactorily with experimental observations; the reaction channel via SOO((1)A') dominates at T<500 K, whereas channels involving formation of SOO((3)A") followed by isomerization to SO2 before dissociation, and formation of SOO((1)A") followed by direct dissociation, become important at high temperatures, accounting for the observed rapid increase in rate coefficient. (C) 2004 American Institute of Physics.
Experimental and theoretical studies of rate coefficients for the reaction O(P-3)+CH3OH at high temperatures
(2005-06-22)
Lu, CW
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Chou, SL
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Lee, YP
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Xu, SC
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Xu, ZF
Rate coefficients of the reaction O(P-3)+CH3OH in the temperature range of 835-1777 K were determined using a diaphragmless shock tube. O atoms were generated by photolysis of SO2 with a KrF excimer laser at 248 nm or an ArF excimer laser at 193 nm; their concentrations were monitored via atomic resonance absorption excited by emission from a microwave-discharged mixture of O-2 and He. The rate coefficients determined for the temperature range can be represented by the Arrhenius equation, k(T)=(2.29 +/- 0.18)x10(-10) exp[-(4210 +/- 100)/T] cm(3) molecule(-1) s(-1); unless otherwise noted, all the listed errors represent one standard deviation in fitting. Combination of these and previous data at lower temperature shows a non-Arrhenius behavior described as the three-parameter equation, k(T)=(2.74 +/- 0.07)x10(-18)T(2.25 +/- 0.13) exp[-(1500 +/- 90)/T] cm(3)molecule(-1) s(-1). Theoretical calculations at the Becke-3-Lee-Yang-Parr (B3LYP)/6-311+G(3df,2p) level locate three transition states. Based on the energies computed with coupled clusters singles, doubles (triples) [CCSD(T)]/6-311+G(3df,2p)//B3LYP/6-311+G(3df,2p), the rate coefficients predicted with canonical variational transition state theory with small curvature tunneling corrections agree satisfactorily with the experimental observations. The branching ratios of two accessible reaction channels forming OH+CH2OH (1a) and OH+CH3O (1b) are predicted to vary strongly with temperature. At 300 K, reaction (1a) dominates, whereas reaction (1b) becomes more important than reaction (1a) above 1700 K. (c) 2005 American Institute of Physics.