Browsing by Author "Lu, Cheng-Hsien"

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Adhesion and Material Properties Between Polyimide and Passivation Layers for Polymer/Metal Hybrid Bonding in 3-D Integration
(2019-03-01)
Lu, Cheng-Hsien
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Kho, Yi-Tung
;
Chen, Chiao-Pei
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Tsai, Bin-Ling
;
Chen, Kuan-Neng
This paper investigates polymer/metal hybrid bonding structure using conventional polyimide and modified polyimide-like material. Adhesion properties between bonding material and passivation layer were evaluated by four-point bending method, atomic force microscopy, water contact angle measurement, and X-ray photoelectron spectroscopy. Various annealing temperatures were applied to verify the reliability under thermal stress. The results show that the modified polyimide-like material with the curing temperature below 250 degrees C has better adhesion than the conventional polyimide. This modified polyimide material can be used in low-temperature hybrid bonding technology for advanced integration.
Adhesion Properties of Electroplating Process Between Polyimide and Metal Layer for Polymer/Metal Hybrid Bonding
(2020-01-01)
Lu, Cheng-Hsien
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Yang, Yi-Lun
;
Chen, Chiao-Pei
;
Tsai, Bin-Ling
;
Chen, Kuan-Neng
This article investigates the adhesion properties between the polyimide layers and the Ti/Cu layer after the electroplating process. The adhesion strength was evaluated by the four-point bending system, and the influence factors were confirmed by using different electroplating times and currents. The fracture interface after the four-point bending measurement was characterized, and the interface spectrum between the polyimide and the Ti/Cu layer was analyzed. The results showed that the modified polyimide-like material has better adhesion performance than the conventional polyimide. Moreover, the mechanism of degradation was proposed. As a result, the modified polyimide-like material can be applied in electroplating, a redistribution layer (RDL) formation, and packaging at the back-end-of-line processes.
Adhesion Property of Polyimide and Passivation Layer for Polymer/metal Wafer-level Hybrid Bonding in 3D Integration
(2018-01-01)
Lu, Cheng-Hsien
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Kho, Yi-Tung
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Yang, Yu-Tao
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Chen, Yu-Pei
;
Chen, Chiao-Pei
In this paper, the four-point bending method experiments were carried out with different polyimides and passivation layers for realization of adhesion property below 400 degrees C. Three types of passivation layers, thermal oxide, tetraethoxysilane (TEOS) oxide, silicon nitride, and three types of polyimides, with hydrophobic silane, with hydrophilic silane and without silane, and annealing temperature were all considered in this paper. Moreover, the relation between adhesion strength and surface roughness is discussed. Finally, a low thermal budget (250-375 degrees C) polyimide/metal hybrid bonding scheme with good stress release was proposed for future hybrid bonding applications.
Asymmetric Wafer-Level Polyimide and Cu/Sn Hybrid Bonding for 3-D Heterogeneous Integration
(2019-07-01)
Lu, Cheng-Hsien
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Jhu, Shu-Yan
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Chen, Chiao-Pei
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Tsai, Bin-Ling
;
Chen, Kuan-Neng
A low-temperature wafer-level polyimide/metal asymmetric hybrid bonding structure using Cu/Sn metal and low-curing temperature polyimide is proposed in this paper. The Cu/Sn and polyimide can be bonded simultaneously at 250 degrees C. An ultrathin nickel (Ni) buffer layer was used to prevent intermetallic compound (IMC) formation during the deposition process of Sn. Moreover, the asymmetric bonding process could not only optimize the metal and polymer deposition processes but also achieve ultrathin bonding. Furthermore, to solve the issue of surface roughness, the window of polymerto- solder (P/S) thickness ratio from 1.51 to 2.66 was also demonstrated to show the tolerance of polymer hybrid bonding. The specific contact resistances of the bonded structures were generally maintained between 10-7 and 10(-8) Omega-cm(2), which indicate excellent electrical performance. As a result, the proposed wafer-level asymmetric hybrid bonding is a promising method for future 2.5-D and 3-D integration.
Effects of Bonding Technology and Thinning Process in Three-Dimensional Integration on Device Characteristics
(2012-10-01)
Lu, Cheng-Hsien
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Cheng, Chuan-An
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Ho, Chia-Hua
;
Chen, Kuan-Neng
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電子工程學系及電子研究所
This research is to investigate the effects of bonding technology and thinning process on the electrical properties of 0.35 mu m technology node n-MOSFET devices. After the bonding process, by changing the bonding temperature up to 400 degrees C and bonding force up to 2.5 x 10(5) Pa, these devices still have the same electrical performances. In addition, thinning process was applied to investigate the stress which would affect the electrical properties of n-MOSFETs. The electrical performances of devices do not change for substrate thickness larger than 466 mu m.
Polymer for Wafer-level Hybrid Bonding and Its Adhesion to Passivation Layer in 3D Integration
(2017-01-01)
Lu, Cheng-Hsien
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Kho, Yi-Tung
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Cheng, Chuan-An
;
Huang, Yen-Jun
;
Chen, Kuan-Neng
Hybrid bonding is one of the key technologies in 3D IC integration, which can integrate various functional chips using vertical interconnection to reduce RC delay and realize heterogeneous integration by bonding process. Conventional hybrid bonding uses oxide layer as the filling material between the metal interconnect, which can prevent oxidation of metal layer and enhance the bonding strength. However, there are some issues of oxide layer such as its poor stress absorption and the demand of surface flatness. Polymer is the potential material to replace oxide as hybrid bonding material because of its stress release property and better surface roughness tolerance. This paper investigates the adhesion properties of polymer and passivation layer and demonstrates perfect polymer-to-polymer wafer-level bonding results.