Browsing by Author "Lu, Chih-Cheng"

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Characterization of Highly Strained nFET Device Performance and Channel Mobility with SMT
(2010)
Lu, Chih-Cheng
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Huang, Jiun-Jia
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Luo, Wun-Cheng
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Hou, Tuo-Hung
;
Lei, Tan-Fu
This paper compares and analyzes the strained negative channel field effect transistor (nFET) device performance and the channel mobility behavior obtained by the stress memorization technique (SMT) using two different types of nitride films. These nitride film properties and wafer bowing during SMT fabrication are investigated. The electrical properties of SMT strained nFET devices including current-voltage characteristics, transconductance, carrier mobility, and interface state (D(it)) are also analyzed. Although SMT nitride strain can enhance electron mobility, it is critical to control the nitride properties and its hydrogen content to minimize electron mobility degradation due to interface-state generation. Thus, a simple view of the essential physics of mobility enhancement in SMT strained nFETs has been provided. Results in this work also provide guidance to further nFET performance enhancement in the ever-more challenging device targets of future technology generations. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3416923] All rights reserved.
CMOS-MEMS micro sensors using mesoporous carbon immobilized by the dielectrophoresis process for gas detection
(2007)
Liao, Kuan-Hsun
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Lu, Chih-Cheng
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Liu, Chuch-Yang
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材料科學與工程學系
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Department of Materials Science and Engineering
A novel class of micro gas sensors using mesoporous carbon powder as the sensitive film is presented for the first time with full CMOS compatibility and MEMS manufacturability. Powdered mesoporous carbon is employed as active sensing layers and deposited between electrodes on a thin membrane where the micro-heater and electrodes are implemented. With employment of the dielectrophoresis (DEP) process, mesoporous carbon is successfully aligned and stacked between Cr electrodes and thus forms an adhesive layer after a dry-up step. Finally, comprehensive gas tests such as N-2, O-2 and CO were proceeded to verify the gas-sensitive characteristics of mesoporous carbon. Experimental results demonstrate that mesoporous carbon powder is promising to offer excellent sensitivity in both oxidizing and reducing gases due to its superior porosity and extensive surface.
Fabrication and carbon monoxide sensing characteristics of mesostructured carbon gas sensors
(2009-12-04)
Liu, Chueh-Yang
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Chen, Chia-Fu
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Leu, Jih-Perng
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Lu, Chih-Cheng
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Liao, Kuan-Hsun
We demonstrated a micro-chemoresistive gas sensing device using mesoporous carbon as the sensitive film and immobilized by dielectrophoresis (DEP) process. The mesoporous materials were characterized by X-ray diffraction (XRD) patterns, N(2) adsorption-desorption isotherms, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). N(2) adsorption-desorption isotherms shows the specific surface area of 1200 m(2)/g, total pore volume is 1.2 cm(3)/g of the mesoporous carbon, and the pore size distribution of mesoporous carbon yields an average pore size of 3 nm. SEM images show a rod-like morphology and TEM images show a highly ordered pore channel with linear arrays. CO gas sensor properties were measured and the resulting sensitivities were 5.7, 6.8, 8.8, 11.6, and 37.6% for concentrations of 30, 45, 60, 75, and 90 ppm. respectively. Additionally, this sensor also exhibited high sensitivity and fast response times for CO gas. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
MESOPOROUS CARBON POWDER GAS SENSORS FOR DETECTION OF CARBON MONOXIDE
(2009-12-01)
Lu, Chih-Cheng
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Liao, Kuan-Hsun
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Tsai, Jeff Tsung-Hui
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Liu, Chueh-Yang
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Leu, Jih-Perng
This article reports a new class of silicon-based microgas sensors utilizing hexagonally-ordered mesoporous carbon powders (MCPs) as the sensitive film. The mesoporous carbon powders featuring high-specific surface area are replicated by the SBA-15 silica template and immobilized between Cr electrodes on a 9 x 9 cm silicon chip by using a. c. dielectrophoresis (DEP) process at room temperature. The silicon sensor platform comprises Cr microheaters embedded in a dielectric thin membrane manufactured by microelectromechanical systems back-etching techniques. It is shown that MCPs can be satisfactorily aligned along electric fields and accumulated to the electrode area. Investigations into CO detection are carried out to verify gas-sensitive characteristics of the MCP nanofilm. Our experimental results disclose the mesoporous carbon powders are successfully chemoresistive to CO, and demonstrate distinct resistance change with respect to ppm-level variation. In addition, response time, recovery time, and reproducible sensing behavior are experimentally obtained.
Strained Silicon Technology: Mobility Enhancement and Improved Short Channel Effect Performance by Stress Memorization Technique on nFET Devices
(2010)
Lu, Chih-Cheng
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Huang, Jiun-Jia
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Luo, Wun-Cheng
;
Hou, Tuo-Hung
;
Lei, Tan-Fu
This paper presents a fundamental study of a stress memorization technique (SMT), which utilizes a capping nitride dielectric film to enhance negative channel field-effect transistor (nFET) device performance. SMT strain engineering is highly compatible with current standard complementary metal oxide semiconductor processes without introducing substantial additional complexity. In this work, we report that SMT-strained nFET exhibits a higher transconductance G(m_lin), which indicates strain-induced electron mobility enhancement. The nFET short channel effect is also improved by the SMT process. Improved V(t) roll-off characteristics manifest itself and are shown to result from retarded junction diffusion as indicated by secondary-ion mass microscopy analysis. Finally, this work demonstrates that when combined with a strained contact etch stop layer (CESL) technique, SMT provides additional strain beyond that provided by the CESL, which results in further improved nFET performance.
Study of chemical supply system of high-tech process using inherently safer design strategies in Taiwan
(2014-05-01)
Chen, Chun-Yu
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Chang, Kuo-Chi
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Huang, Chi-Hung
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Lu, Chih-Cheng
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工學院
The photoelectric, semiconductor and other high-tech industries are Taiwan\'s most important economic activities. High-tech plant incidents are caused by hazardous energy, even when that energy is confined to the inside of the process machine. During daily maintenance procedures, overhauling or troubleshooting, engineers entering the interior of the machines are in direct contact with the source of the energy or hazardous substances, which can cause serious injury. The best method for preventing such incidents is to use inherently safer design strategies (ISDs); this approach can fully eliminate the dangers from the sources of hazardous energy at a facility. This study first conducts a lithography process hazard analysis and compiles a statistical analysis of the causes of the fires and losses at high-tech plants in Taiwan since 1996, the aim being to establish the necessary improvement measures by using the Fire Dynamics Simulation (FDS) to solve relevant problems. The researchers also investigate the lithography process machine in order to explore carriage improvement measures, and analyse the fires\' causes and reactive materials hazardous properties, from 1996 to 2012. The effective improvement measures are established based on the accident statistics. The study site is a 300 mm wafer fabrication plant located in Hsinchu Science Park, Taiwan. After the completion of the annual maintenance jobs improvement from September 2011 to December 2012, the number of lithography process accidents was reduced from 6 to 1. The accident rate was significantly reduced and there were no staff time losses for a continuous 6882 h. It is confirmed that the plant safety level has been effectively enhanced. The researchers offer safety design recommendations regarding transport process appliances, chemical storage tanks, fume cupboard devices, chemical rooms, pumping equipment, transportation pipelines, valve manual box (VMB) process machines and liquid waste discharge lines. These recommendations can be applied in these industries to enhance the safety level of high-tech plants, facilities or process systems. (c) 2014 Elsevier Ltd. All rights reserved.