Browsing by Author "Lu, Chih-Hung"

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High-Performance Double-Gate alpha-InGaZnO ISFET pH Sensor Using a HfO2 Gate Dielectric
(2018-01-01)
Lu, Chih-Hung
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Hou, Tuo-Hung
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Pan, Tung-Ming
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In this paper, we present a high-performance double-gate (DG) amorphous indium-gallium-zinc-oxide (alpha-InGaZnO) ion-sensitive field-effect transistor (ISFET) using three HfO2 gate dielectric thicknesses as a top gate (TG). The DG structure alpha-InGaZnO TFTs with a 40-nm TG HfO2 dielectric exhibited a small threshold voltage of 50 mV, a low subthreshold swing of 144.1 mV/decade, and a high ION/IOFF current ratio of 4.5x107. The alpha-InGaZnO ISFET prepared at the 40-nm HfO2 sensing membrane in the DG mode showed a pH sensitivity of 937 mV/pH, which is far more than the Nernst limit. The hysteresis and drift behaviors of DG ISFET fabricated with the 40-nm condition also showed relatively better chemical stability compared with other conditions.
Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process
(2016-12)
Lu, Chih-Hung
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Hou, Tuo-Hung
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Pan, Tung-Ming
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In this brief, we developed a low-voltage (V-DS = 0.5 V and V-GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high-kappa HfO2 sensing membrane grown by low-temperature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm(2)/V-s, a small subthreshold swing of 90 mV/decade, and high I-ON/I-OFF ratio of 2.4x10(7). The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7 -> 4 -> 7 -> 10 -> 7 and a low drift rate of 2.5 mV/h at pH 7.
NTP-PoCT: A conformance test tool for push-to-talk over cellular network
(2008-06-01)
Lin, Yi-Bing
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Wang, Chun-Chieh
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Lu, Chih-Hung
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Hsu, Miao-Ru
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資訊工程學系
This paper describes a conformance test tool for push-to-talk over cellular network developed on an Open Mobile Alliance Service Interoperability Test Platform. Based on the TTCN-3 specifications, we show how PoC test cases can be efficiently implemented on the test platform. Copyright (C) 2007 John Wiley & Sons, Ltd.
Resistive Switching Characteristics of Tm2O3, Yb2O3, and Lu2O3-Based Metal-Insulator-Metal Memory Devices
(2012-09-01)
Pan, Tung-Ming
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Lu, Chih-Hung
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Mondal, Somnath
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Ko, Fu-Hsiang
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生物科技學系
In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE2O3/TaN (rare-earth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE2O3 - based memory devices in the low-resistance state is ohmic emission, whereas Tm2O3, Yb2O3, and Lu2O3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu2O3/TaN device showed a high-resistance ratio of similar to 10(4), a high device yield of similar to 70%, a good data retention as long as 10(5) s measured at 85 degrees C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu2O3 film. All of these results suggest that Ru/Lu2O3/TaN structure memory is a good candidate for future nonvolatile RS memory applications.