Browsing by Author "Lu, Hong-Ting"

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Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate
(2014)
Chang, Chia-Hao
;
Li, Zong-Lin
;
Lu, Hong-Ting
;
Lee, Chien-Ping
;
Lin, Sheng-Di
The mid-infrared electrically-driven laser using InGaAs/GaAsSb \'W\'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 mu m with the lowest threshold current density of 1.42 kA/cm(2) is presented.
Low-Threshold Short-Wavelength Infrared InGaAs/GaAsSb \'W\'-Type QW Laser on InP Substrate
(2015-02-01)
Chang, Chia-Hao
;
Li, Zong-Lin
;
Lu, Hong-Ting
;
Pan, Chien-Hung
;
Lee, Chien-Ping
The electrically driven short-wavelength infrared semiconductor laser using InP-based InGaAs/GaAsSb W-type quantum wells (QWs) is investigated. Using Sb-free separate confined layer and engineered QWs, the laser lasing at 2.35 mu m exhibits a low-threshold current density at infinite cavity length of 83 A/cm(2) per QW under pulsed operation at room temperature. The internal loss alpha(i) and internal quantum efficiency eta(i) of the laser are 17.5 cm(-1) and 15%, respectively.
Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate
(2014-02-14)
Chang, Chia-Hao
;
Li, Zong-Lin
;
Pan, Chien-Hung
;
Lu, Hong-Ting
;
Lee, Chien-Ping
We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 mu m at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234 W/cm(2) and 20.5 cm(-1), respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of "M"-type QW laser was superior to the inverse "W"-type one due to its thinner barrier for holes. Further improvement of the "M"-type QW structure could lead to a cost-effective mid-infrared light source. (C) 2014 AIP Publishing LLC.