Browsing by Author "Lu, MF"

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Double-layer networks with holographic optical switches
(2004-02-20)
Deng, JS
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Lu, MF
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Huang, YT
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
The double-layer networks have the advantages of being strictly nonblocking and having a simpler routing algorithm, the lowest system insertion loss, a zero differential loss, fewer drivers, fewer interconnection lines, fewer crossovers, and the best signal-to-noise-ratio characteristic compared with any nondilated network. Using holographic optical switches to construct these networks not only eliminates all interconnection lines and crossovers but also reduces the number of drivers. (C) 2004 Optical Society of America.
Substrate-bias-dependent dielectric breakdown in ultrathin-oxide p-metal-oxide-semiconductor field-effect transistors
(2005-07-15)
Chiang, S
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Lu, MF
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Huang-Lu, S
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Chien, SC
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Wang, TH
An explanation of the breakdown behavior of ultrathin-gate-oxide (1.6 nm) p-metal-oxide-semiconductor field-effect transistors under a reverse substrate bias is presented. A significant degradation in lifetime induced by a positive substrate bias and a decrease in the power-law exponent (n) were observed. The quantitative hydrogen-based model [J. Sune and E. Wu, Digest of Technical Papers, 2001 Symposium on VLSI Technology, Kyoto, Japan, 12-14 June 2001 (unpublished), p. 97] is used to explain this observation while taking the channel quantization effect into consideration. Using this model, the stress voltage dependence of time-dependent dielectric breakdown in our experiment fits well with simulation results. This indicates that the degradation is due to the channel hole quantization-enhanced dissipation energy of injected electrons at the anode interface. (c) 2005 American Institute of Physics.