Browsing by Author "Lu, MP"

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Channel-width dependence of low-frequency noise in process tensile-strained n-channel metal-oxide-semiconductor transistors
(2006-02-06)
Lu, MP
;
Lee, WC
;
Chen, MJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Low-frequency noise measurement in process tensile-strained n-channel metal-oxide-semiconductor field-effect transistors yields the density of the interface states, exhibiting a decreasing trend while decreasing the channel width. This finding corroborates the group of P-b centers caused by the lattice mismatch at (100) Si-SiO2 interface as the origin of the underlying interface states. The inverse narrow width effect appears to be insignificant, substantially confirming the validity of the noise measurement. The present noise experiment therefore points to the enhancement of the tensile strain in the presence of channel narrowing, which in turn reduces the lattice mismatch.
On-off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors
(2002-10-28)
Chen, MJ
;
Lu, MP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
On-off switching behaviors or two-level random telegraph signals (RTS) are measured in the low voltage (-1.4 0V
Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system
(2005-12-01)
Lu, MP
;
Chen, MJ
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Coulomb energy is essential to the charging of a nanometer-scale trap in the oxide of a metal-oxide-semiconductor system. Traditionally the Coulomb energy calculation was performed on the basis of an interfacelike trap. In this paper, we present experimental evidence from a 1.7-nm oxide: Substantial enhancements in Coulomb energy due to the existence of a deeper trap in the oxide. Other corroborating evidence is achieved on a multiphonon theory, which can adequately elucidate the measured capture and emission kinetics. The corresponding configuration coordinate diagrams are established. We further elaborate on the clarification of the Coulomb energy and differentiate it from that in memories containing nanocrystals or quantum dots in the oxide. Some critical issues encountered in the work are addressed as well.
Semiconducting single-walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculation
(2006-01-30)
Lu, MP
;
Hsiao, CY
;
Lo, PY
;
Wei, JH
;
Yang, YS
We fabricate and measure a single-walled carbon nanotube transistor having a liquid-gate electrode. The ratio value of I-on/I-off is as high as 10(4), indicating the presence of a semiconducting channel. A passivation layer over the source/drain electrode greatly suppresses the liquid-gate leakage by about three orders of magnitude. The channel currents are noticeably distinct between two liquid samples: distilled water and aqueous solution (1x10(-4) M NaCl). This biological sensing ability is attributed to the different electrical double-layer capacitances with respect to the bulk part of the channel. The corresponding theoretical calculation is carried out in detail. (c) 2006 American Institute of Physics.