Browsing by Author "Lu, Po-Ching"

Now showing 1 - 2 of 2

Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
(2010)
Chang, Chia-Hua
;
Shie, Tin-En
;
Lin, Yueh-Chin
;
Kakushima, K.
;
Iwai, H.
Post deposition annealing is a critical process for the quality improvement of gate oxides on III-V MOS capacitors. Though high temperature annealing would effectively repair defects, it could also induce undesired electrical characteristics due to the crystallization of the gate oxide. In this work, we investigate the novel two steps annealing technique to improve the HfO2/In0.7Ga0.3As MOSCAP properties. The two steps process takes advantage of 1st high temperature annealing (550 degrees C) to improve the interface quality and 2nd low temperature annealing (450 degrees C) for curing bulk oxide without oxide crystallization. The two steps annealing technique greatly improves the HfO2/In0.7Ga0.3As properties as compared to single step process and is expected to be helpful for future III-V MOSFET development.
Study of La2O3/HfO2 Gate Dielectric for n-InAs Metal-Oxide-Semiconductor Capacitor
(2011)
Lin, Yueh-Chin
;
Chang, Chia-Hua
;
Kakushima, Kuniyuki
;
Iwai, Hiroshi
;
Shie, Tin-En
In this study, we investigate the composite La2O3/HfO2 high k dielectric as the gate oxide for n-InAs metal-oxide semiconductor (MOS) capacitor. The La2O3 was used for its high k value and HfO2 was used as the diffusion barrier and was deposited between La2O3 and InGaAs to prevent the Inter-diffusion between InAs and La(2)OZ(3) layers after post deposition annealing (PDA). Finally, we demonstrate the La2O3/HfO2 composite oxide structure as the high K dielectric for n-InAs MOS capacitor with enhanced capacitance for the MOS capacitor.