Browsing by Author "Lu, Po-Yen"

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An Investigation on 25Gb/s Ultra-Short Cavity Quantum Well Lasers Operated at Elevated Temperatures
(2019-01-01)
Tsai, Yi-Lin
;
Chen, Bo-Hong
;
Hsu, Shun-Chieh
;
Shih, Hsiang-Yun
;
Lu, Po-Yen
A Fabry-Perot quantum well laser with ultra-short cavity is designed and fabricated. The emission wavelength is at 1310nm band which is important for data center applications. The shortest cavity length is 25 mu m, and the laser has mW-class output with low threshold currents (4mA in average). At room temperature, an opened eye diagram with 28Gb/s transmission rate can be observed. Clear 25Gb/s eye patterns from 15 degrees C to 65 degrees C are also demonstrated.
Enhancing Performance in Thin Tilm Transistors with Vacuum or Solution Processed Amorphous Oxide Semiconductors Towards Display Applications
(2018-01-01)
Chen, Changdong
;
Li, Gongtan
;
Li, MinMin
;
Yang, Bo-Ru
;
Liu, Chuan
To simultaneously achieve high mobility and good reliability of thin-film transistors (TFTs), we controlled oxygen vacancies via nitrogen incorporation in InGaZnO TFTs from vacuum-or solution-based methods. For display applications, IGZO and crystalline silicon TFTs were integrated together to build hybrid CMOS. Also, additive patterning method is developed for solution-processed oxide semiconductors, based on which wafer-scale TFT arrays and NMOS have been demonstrated.
High Speed Directly Modulated Fabry-Perot Lasers With an Ultra-Short Cavity Length
(2020-05-01)
Tsai, Yi-Lin
;
Wang, Shou-Wei
;
Huang, Huang-Hsiung
;
Shih, Hsiang-Yun
;
Lu, Po-Yen
In this study, Fabry-Perot quantum well lasers with shortened cavity designs (25 and 50 mu m) were fabricated. The devices had dry-etched and cleaved facets and exhibited an output power of up to 2.36 mW for a cavity length of 25 mu m; good spectral performance was achieved. Single-optical-mode operation with better than 25dB of side mode suppression ratio can be achieved for the fabricated devices with 25- and 50-mu m cavities. The short-cavity devices also exhibited highspeed modulation at elevated temperatures. Moreover, 25 Gb/s eye diagrams could be obtained at 65oC for the 25 mu m device and 55oC for the 50 mu m device. Due to their small area, ultra-shortcavity Fabry-Perot laser can be suitably used in next-generation light sources for optical communication.
Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters
(2017-09-01)
Chen, ChangDong
;
Yang, Bo-Ru
;
Liu, Chuan
;
Zhou, Xing-Yu
;
Hsu, Yuan-Jun
The applications of a-InGaZnO thin-film transistors (TFTs) to logic circuits have been limited owing to the intrinsic n-channel operation. In this paper, we demonstrated a hybrid inverter constructed by p-channel low-temperature poly-silicon (LTPS) TFTs and n-channel amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs. Hydrogenated LTPS TFTs and a-IGZO TFTs have been successfully fabricated on the same panel, followed by a rapid thermal annealing treatment to remove the hydrogens in the a-IGZO TFTs. The resulted hybrid inverter exhibits large noise margin closed to V-DD/2 and a high voltage gain as 68.3. Due to the complementary configurations in the static state, the inverter shows small current and thus consumes low power in hundreds of picowatts. As all the fabrication processes are compatible with conventional techniques, the reported results may open new opportunities in circuit design and applications for oxide TFTs.
Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations
(2016-05)
Li, GongTan
;
Yang, Bo-Ru
;
Liu, Chuan
;
Lee, Chia-Yu
;
Wu, Yuan-Chun
The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.
Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions
(2016-11)
Li, GongTan
;
Zhan, Runze
;
Yang, Bo-Ru
;
Liu, Chuan
;
Dong, ChengYuan
Instability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) remains an obstacle for commercialization. Here, we systematically discuss the effect of nitrogen incorporation on a-IGZO TFT stability and developed Ar/O-2/N-2 atmosphere to improve the stability under stressing in different conditions. Based on X-ray photoelectron spectrometer results, it is revealed that the positive gate bias stress (PGBS) stability is significantly improved due to microscopically passivated metal-oxygen bonds. Yet, the negative gate bias and light stress (NBLS) stability is seriously deteriorated with heavily nitrogen incorporation probably due to the bandgap narrowing effect. By optimizing a mixed O-2/N-2 atmosphere, the subgap states are finely tuned to afford optimal performance and stability. The developed IGZO TFTs exhibit mobility (12.67 cm(2)/Vs), small shift of threshold voltage under PGBS (reduced by 64% as compared with the pristine a-IGZO TFTs), and good negative gate bias stability and with NBLS stability as well.